Polarity inversion of AlN film grown on nitrided a-plane sapphire substrate with pulsed DC reactive sputtering
The effect of oxygen partial pressure (PO2) on polarity and crystalline quality of AlN films grown on nitrided a-plane sapphire substrates by pulsed direct current (DC) reactive sputtering was investigated as a fundamental study. The polarity inversion of AlN from nitrogen (−c)-polarity to aluminum...
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Format: | Article |
Language: | English |
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AIP Publishing LLC
2018-04-01
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Series: | AIP Advances |
Online Access: | http://dx.doi.org/10.1063/1.5024996 |
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author | Marsetio Noorprajuda Makoto Ohtsuka Hiroyuki Fukuyama |
author_facet | Marsetio Noorprajuda Makoto Ohtsuka Hiroyuki Fukuyama |
author_sort | Marsetio Noorprajuda |
collection | DOAJ |
description | The effect of oxygen partial pressure (PO2) on polarity and crystalline quality of AlN films grown on nitrided a-plane sapphire substrates by pulsed direct current (DC) reactive sputtering was investigated as a fundamental study. The polarity inversion of AlN from nitrogen (−c)-polarity to aluminum (+c)-polarity occurred during growth at a high PO2 of 9.4×103 Pa owing to Al-O octahedral formation at the interface of nitrided layer and AlN sputtered film which reset the polarity of AlN. The top part of the 1300 nm-thick AlN film sputtered at the high PO2 was polycrystallized. The crystalline quality was improved owing to the high kinetic energy of Al sputtered atom in the sputtering phenomena. Thinner AlN films were also fabricated at the high PO2 to eliminate the polycrystallization. For the 200 nm-thick AlN film sputtered at the high PO2, the full width at half-maximum values of the AlN (0002) and (10−12) X-ray diffraction rocking curves were 47 and 637 arcsec, respectively. |
first_indexed | 2024-12-22T01:22:02Z |
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id | doaj.art-00b9db0f1af24744984253ae7acb1c5d |
institution | Directory Open Access Journal |
issn | 2158-3226 |
language | English |
last_indexed | 2024-12-22T01:22:02Z |
publishDate | 2018-04-01 |
publisher | AIP Publishing LLC |
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series | AIP Advances |
spelling | doaj.art-00b9db0f1af24744984253ae7acb1c5d2022-12-21T18:43:42ZengAIP Publishing LLCAIP Advances2158-32262018-04-0184045124045124-1110.1063/1.5024996067804ADVPolarity inversion of AlN film grown on nitrided a-plane sapphire substrate with pulsed DC reactive sputteringMarsetio Noorprajuda0Makoto Ohtsuka1Hiroyuki Fukuyama2Institute of Multidisciplinary Research for Advanced Materials (IMRAM), Tohoku University, 2-1-1, Katahira, Aoba-ku, Sendai 980-8577, JapanInstitute of Multidisciplinary Research for Advanced Materials (IMRAM), Tohoku University, 2-1-1, Katahira, Aoba-ku, Sendai 980-8577, JapanInstitute of Multidisciplinary Research for Advanced Materials (IMRAM), Tohoku University, 2-1-1, Katahira, Aoba-ku, Sendai 980-8577, JapanThe effect of oxygen partial pressure (PO2) on polarity and crystalline quality of AlN films grown on nitrided a-plane sapphire substrates by pulsed direct current (DC) reactive sputtering was investigated as a fundamental study. The polarity inversion of AlN from nitrogen (−c)-polarity to aluminum (+c)-polarity occurred during growth at a high PO2 of 9.4×103 Pa owing to Al-O octahedral formation at the interface of nitrided layer and AlN sputtered film which reset the polarity of AlN. The top part of the 1300 nm-thick AlN film sputtered at the high PO2 was polycrystallized. The crystalline quality was improved owing to the high kinetic energy of Al sputtered atom in the sputtering phenomena. Thinner AlN films were also fabricated at the high PO2 to eliminate the polycrystallization. For the 200 nm-thick AlN film sputtered at the high PO2, the full width at half-maximum values of the AlN (0002) and (10−12) X-ray diffraction rocking curves were 47 and 637 arcsec, respectively.http://dx.doi.org/10.1063/1.5024996 |
spellingShingle | Marsetio Noorprajuda Makoto Ohtsuka Hiroyuki Fukuyama Polarity inversion of AlN film grown on nitrided a-plane sapphire substrate with pulsed DC reactive sputtering AIP Advances |
title | Polarity inversion of AlN film grown on nitrided a-plane sapphire substrate with pulsed DC reactive sputtering |
title_full | Polarity inversion of AlN film grown on nitrided a-plane sapphire substrate with pulsed DC reactive sputtering |
title_fullStr | Polarity inversion of AlN film grown on nitrided a-plane sapphire substrate with pulsed DC reactive sputtering |
title_full_unstemmed | Polarity inversion of AlN film grown on nitrided a-plane sapphire substrate with pulsed DC reactive sputtering |
title_short | Polarity inversion of AlN film grown on nitrided a-plane sapphire substrate with pulsed DC reactive sputtering |
title_sort | polarity inversion of aln film grown on nitrided a plane sapphire substrate with pulsed dc reactive sputtering |
url | http://dx.doi.org/10.1063/1.5024996 |
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