Polarity inversion of AlN film grown on nitrided a-plane sapphire substrate with pulsed DC reactive sputtering

Polarity inversion of AlN film grown on nitrided a-plane sapphire substrate with pulsed DC reactive sputtering

The effect of oxygen partial pressure (PO2) on polarity and crystalline quality of AlN films grown on nitrided a-plane sapphire substrates by pulsed direct current (DC) reactive sputtering was investigated as a fundamental study. The polarity inversion of AlN from nitrogen (−c)-polarity to aluminum...

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Bibliographic Details
Main Authors:	Marsetio Noorprajuda, Makoto Ohtsuka, Hiroyuki Fukuyama
Format:	Article
Language:	English
Published:	AIP Publishing LLC 2018-04-01
Series:	AIP Advances
Online Access:	http://dx.doi.org/10.1063/1.5024996

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