Source-Pull and Load-Pull Characterization of Graphene FET

Source-Pull and Load-Pull Characterization of Graphene FET

This paper presents the characterization of a GFET transistor using a source-pull/load-pull test set. The characterization shows that despite the good f<sub>T</sub> and f<sub>MAX</sub>, it is hard to achieve power gain using the GFET device within a circuit configuration. Thi...

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Bibliographic Details
Main Authors: Sebastien Fregonese, Magali de Matos, David Mele, Cristell Maneux, Henri Happy, Thomas Zimmer
Format: Article
Language:English
Published: IEEE 2015-01-01
Series:IEEE Journal of the Electron Devices Society
Subjects:
Graphene
FET
circuit design
impedance matching
source-pull
load-pull
Online Access:https://ieeexplore.ieee.org/document/6910223/

Internet

https://ieeexplore.ieee.org/document/6910223/

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