Mechanical Load-Induced Atomic-Scale Deformation Evolution and Mechanism of SiC Polytypes Using Molecular Dynamics Simulation

Mechanical Load-Induced Atomic-Scale Deformation Evolution and Mechanism of SiC Polytypes Using Molecular Dynamics Simulation

Silicon carbide (SiC) is a promising semiconductor material for making high-performance power electronics with higher withstand voltage and lower loss. The development of cost-effective machining technology for fabricating SiC wafers requires a complete understanding of the deformation and removal m...

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Bibliographic Details
Main Authors: Haoxiang Wang, Shang Gao, Renke Kang, Xiaoguang Guo, Honggang Li
Format: Article
Language:English
Published: MDPI AG 2022-07-01
Series:Nanomaterials
Subjects:
silicon carbide
molecular dynamics simulations
deformation mechanism
amorphous phase transformation
dislocation
stacking faults
Online Access:https://www.mdpi.com/2079-4991/12/14/2489

Internet

https://www.mdpi.com/2079-4991/12/14/2489

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