Towards Sustainable Crossbar Artificial Synapses with Zinc-Tin Oxide

Towards Sustainable Crossbar Artificial Synapses with Zinc-Tin Oxide

In this article, characterization of fully patterned zinc-tin oxide (ZTO)-based memristive devices with feature sizes as small as 25 µm<sup>2</sup> is presented. The devices are patterned via lift-off with a platinum bottom contact and a gold-titanium top contact. An on/off ratio of more...

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Bibliographic Details
Main Authors: Carlos Silva, Jorge Martins, Jonas Deuermeier, Maria Elias Pereira, Ana Rovisco, Pedro Barquinha, João Goes, Rodrigo Martins, Elvira Fortunato, Asal Kiazadeh
Format: Article
Language:English
Published: MDPI AG 2021-04-01
Series:Electronic Materials
Subjects:
memristor
ZTO
amorphous oxide
physical mechanism
resistive switching device
Online Access:https://www.mdpi.com/2673-3978/2/2/9

Internet

https://www.mdpi.com/2673-3978/2/2/9

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