A review on morphotropic phase boundary in fluorite-structure hafnia towards DRAM technology
Abstract In the present hyper-scaling era, memory technology is advancing owing to the demand for high-performance computing and storage devices. As a result, continuous work on conventional semiconductor-process-compatible ferroelectric memory devices such as ferroelectric field-effect transistors,...
| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
SpringerOpen
2022-10-01
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| Series: | Nano Convergence |
| Subjects: | |
| Online Access: | https://doi.org/10.1186/s40580-022-00333-7 |