Molecular Dynamics Simulation of Laser Induced Heating of Silicon Dioxide Thin Films
The full-atomistic classical molecular dynamics simulation of the laser heating of silicon dioxide thin films is performed. Both dense isotropic films and porous anisotropic films are investigated. It is assumed that heating occurs due to nodal structural defects, which are currently considered one...
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| Format: | Article |
| Language: | English |
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MDPI AG
2021-11-01
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| Series: | Nanomaterials |
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| Online Access: | https://www.mdpi.com/2079-4991/11/11/2986 |
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| author | Fedor Vasilievich Grigoriev Vladimir Borisovich Sulimov Alexander Vladimirovich Tikhonravov |
| author_facet | Fedor Vasilievich Grigoriev Vladimir Borisovich Sulimov Alexander Vladimirovich Tikhonravov |
| author_sort | Fedor Vasilievich Grigoriev |
| collection | DOAJ |
| description | The full-atomistic classical molecular dynamics simulation of the laser heating of silicon dioxide thin films is performed. Both dense isotropic films and porous anisotropic films are investigated. It is assumed that heating occurs due to nodal structural defects, which are currently considered one of the possible causes of laser induced damage. It is revealed that heating to a temperature of 1000 K insignificantly affects the structure of the films and the concentration of point defects responsible for the radiation absorption. An increase in the heating temperature to 2000 K leads to the growth of the concentration of these defects. For “as deposited” films, this growth is greater in the case of a porous film deposited at a high deposition angle. Annealing of film reduces the difference in the concentration of laser induced defects in dense and porous films. The possible influence of optical active defects arising due to heating on the laser induced damage threshold is discussed. |
| first_indexed | 2024-03-10T05:12:28Z |
| format | Article |
| id | doaj.art-0166a02b4f70479d99177fbc036b3552 |
| institution | Directory Open Access Journal |
| issn | 2079-4991 |
| language | English |
| last_indexed | 2024-03-10T05:12:28Z |
| publishDate | 2021-11-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Nanomaterials |
| spelling | doaj.art-0166a02b4f70479d99177fbc036b35522023-11-23T00:41:27ZengMDPI AGNanomaterials2079-49912021-11-011111298610.3390/nano11112986Molecular Dynamics Simulation of Laser Induced Heating of Silicon Dioxide Thin FilmsFedor Vasilievich Grigoriev0Vladimir Borisovich Sulimov1Alexander Vladimirovich Tikhonravov2Research Computing Center, M.V. Lomonosov Moscow State University, Leninskie Gory, 119234 Moscow, RussiaResearch Computing Center, M.V. Lomonosov Moscow State University, Leninskie Gory, 119234 Moscow, RussiaResearch Computing Center, M.V. Lomonosov Moscow State University, Leninskie Gory, 119234 Moscow, RussiaThe full-atomistic classical molecular dynamics simulation of the laser heating of silicon dioxide thin films is performed. Both dense isotropic films and porous anisotropic films are investigated. It is assumed that heating occurs due to nodal structural defects, which are currently considered one of the possible causes of laser induced damage. It is revealed that heating to a temperature of 1000 K insignificantly affects the structure of the films and the concentration of point defects responsible for the radiation absorption. An increase in the heating temperature to 2000 K leads to the growth of the concentration of these defects. For “as deposited” films, this growth is greater in the case of a porous film deposited at a high deposition angle. Annealing of film reduces the difference in the concentration of laser induced defects in dense and porous films. The possible influence of optical active defects arising due to heating on the laser induced damage threshold is discussed.https://www.mdpi.com/2079-4991/11/11/2986thin filmsmolecular dynamicssilicon dioxide filmslaser induced damage |
| spellingShingle | Fedor Vasilievich Grigoriev Vladimir Borisovich Sulimov Alexander Vladimirovich Tikhonravov Molecular Dynamics Simulation of Laser Induced Heating of Silicon Dioxide Thin Films Nanomaterials thin films molecular dynamics silicon dioxide films laser induced damage |
| title | Molecular Dynamics Simulation of Laser Induced Heating of Silicon Dioxide Thin Films |
| title_full | Molecular Dynamics Simulation of Laser Induced Heating of Silicon Dioxide Thin Films |
| title_fullStr | Molecular Dynamics Simulation of Laser Induced Heating of Silicon Dioxide Thin Films |
| title_full_unstemmed | Molecular Dynamics Simulation of Laser Induced Heating of Silicon Dioxide Thin Films |
| title_short | Molecular Dynamics Simulation of Laser Induced Heating of Silicon Dioxide Thin Films |
| title_sort | molecular dynamics simulation of laser induced heating of silicon dioxide thin films |
| topic | thin films molecular dynamics silicon dioxide films laser induced damage |
| url | https://www.mdpi.com/2079-4991/11/11/2986 |
| work_keys_str_mv | AT fedorvasilievichgrigoriev moleculardynamicssimulationoflaserinducedheatingofsilicondioxidethinfilms AT vladimirborisovichsulimov moleculardynamicssimulationoflaserinducedheatingofsilicondioxidethinfilms AT alexandervladimirovichtikhonravov moleculardynamicssimulationoflaserinducedheatingofsilicondioxidethinfilms |