Mobility-electron density relation probed via controlled oxygen vacancy doping in epitaxial BaSnO3
The recently discovered high room temperature mobility in wide band gap semiconducting BaSnO3 is of exceptional interest for perovskite oxide heterostructures. Critical open issues with epitaxial films include determination of the optimal dopant and understanding the mobility-electron density (μ-n)...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2017-05-01
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| Series: | APL Materials |
| Online Access: | http://dx.doi.org/10.1063/1.4983039 |