The use of one-component plasma in the icp-rie etching process of periodic structures for applications in photodetector arrays
The paper presents the effect of ICP-RIE etching time using one-component plasma on various parameters of an InAs/GaSb type II superlattice matrix. In the studies, two samples used at different BCl3 gas flow rates were compared and it was found that using a lower flow rate of 7 sccm results in obtai...
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| Format: | Article |
| Language: | English |
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Polish Academy of Sciences
2023-11-01
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| Series: | Metrology and Measurement Systems |
| Subjects: | |
| Online Access: | https://journals.pan.pl/Content/130315/art13_int.pdf |
| _version_ | 1797299268273307648 |
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| author | Marta Różycka Agata Jasik Paweł Kozłowski Krzysztof Bracha Jacek Ratajczak Anna Wierzbicka-Miernik |
| author_facet | Marta Różycka Agata Jasik Paweł Kozłowski Krzysztof Bracha Jacek Ratajczak Anna Wierzbicka-Miernik |
| author_sort | Marta Różycka |
| collection | DOAJ |
| description | The paper presents the effect of ICP-RIE etching time using one-component plasma on various parameters of an InAs/GaSb type II superlattice matrix. In the studies, two samples used at different BCl3 gas flow rates were compared and it was found that using a lower flow rate of 7 sccm results in obtaining a smoother sidewall morphology. Next, five periodic mesa-shaped structures were etched under identical conditions, but using a different time. The results indicated that the ICP-RIE method using a BCl3 flow rate of 7 sccm, ICP:RIE power ratio of 300W:270W allowed the ICP:RIE formation of a periodic mesa-shaped structure with smooth and perpendicular sidewalls. |
| first_indexed | 2024-03-07T22:47:10Z |
| format | Article |
| id | doaj.art-01a1cefabe2d49a08c932b9a5dede0cd |
| institution | Directory Open Access Journal |
| issn | 2300-1941 |
| language | English |
| last_indexed | 2024-03-07T22:47:10Z |
| publishDate | 2023-11-01 |
| publisher | Polish Academy of Sciences |
| record_format | Article |
| series | Metrology and Measurement Systems |
| spelling | doaj.art-01a1cefabe2d49a08c932b9a5dede0cd2024-02-23T14:16:24ZengPolish Academy of SciencesMetrology and Measurement Systems2300-19412023-11-01vol. 30No 4809819https://doi.org/10.24425/mms.2023.147955The use of one-component plasma in the icp-rie etching process of periodic structures for applications in photodetector arraysMarta Różycka0Agata Jasik1https://orcid.org/0000-0003-4051-499XPaweł Kozłowski2https://orcid.org/0000-0002-2063-0857Krzysztof Bracha3Jacek Ratajczak4Anna Wierzbicka-Miernik5Łukasiewicz Research Network – Institute of Microelectronics and Photonics, 32/46 Lotników Avenue, 02-668, Warsaw, PolandŁukasiewicz Research Network – Institute of Microelectronics and Photonics, 32/46 Lotników Avenue, 02-668, Warsaw, PolandŁukasiewicz Research Network – Institute of Microelectronics and Photonics, 32/46 Lotników Avenue, 02-668, Warsaw, PolandŁukasiewicz Research Network – Institute of Microelectronics and Photonics, 32/46 Lotników Avenue, 02-668, Warsaw, PolandŁukasiewicz Research Network – Institute of Microelectronics and Photonics, 32/46 Lotników Avenue, 02-668, Warsaw, PolandInstitute of Metallurgy and Materials Science, Polish Academy of Sciences, 25 Reymonta Street, 30-059, Kraków, PolandThe paper presents the effect of ICP-RIE etching time using one-component plasma on various parameters of an InAs/GaSb type II superlattice matrix. In the studies, two samples used at different BCl3 gas flow rates were compared and it was found that using a lower flow rate of 7 sccm results in obtaining a smoother sidewall morphology. Next, five periodic mesa-shaped structures were etched under identical conditions, but using a different time. The results indicated that the ICP-RIE method using a BCl3 flow rate of 7 sccm, ICP:RIE power ratio of 300W:270W allowed the ICP:RIE formation of a periodic mesa-shaped structure with smooth and perpendicular sidewalls.https://journals.pan.pl/Content/130315/art13_int.pdficp-riedry etchingtype ii inas/gasb superlatticebcl3 |
| spellingShingle | Marta Różycka Agata Jasik Paweł Kozłowski Krzysztof Bracha Jacek Ratajczak Anna Wierzbicka-Miernik The use of one-component plasma in the icp-rie etching process of periodic structures for applications in photodetector arrays Metrology and Measurement Systems icp-rie dry etching type ii inas/gasb superlattice bcl3 |
| title | The use of one-component plasma in the icp-rie etching process of periodic structures for applications in photodetector arrays |
| title_full | The use of one-component plasma in the icp-rie etching process of periodic structures for applications in photodetector arrays |
| title_fullStr | The use of one-component plasma in the icp-rie etching process of periodic structures for applications in photodetector arrays |
| title_full_unstemmed | The use of one-component plasma in the icp-rie etching process of periodic structures for applications in photodetector arrays |
| title_short | The use of one-component plasma in the icp-rie etching process of periodic structures for applications in photodetector arrays |
| title_sort | use of one component plasma in the icp rie etching process of periodic structures for applications in photodetector arrays |
| topic | icp-rie dry etching type ii inas/gasb superlattice bcl3 |
| url | https://journals.pan.pl/Content/130315/art13_int.pdf |
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