Narrow ridge waveguide high power single mode 1.3-μm InAs/InGaAs ten-layer quantum dot lasers

Narrow ridge waveguide high power single mode 1.3-μm InAs/InGaAs ten-layer quantum dot lasers

<p>Abstract</p><p>Ten-layer InAs/In<sub>0.15</sub>Ga<sub>0.85</sub>As quantum dot (QD) laser structures have been grown using molecular beam epitaxy (MBE) on GaAs (001) substrate. Using the pulsed anodic oxidation technique, narrow (2 &#956;m) ridge wave...

Full description

Bibliographic Details
Main Authors: Cao Q, Yoon SF, Liu CY, Ngo CY
Format: Article
Language:English
Published: SpringerOpen 2007-01-01
Series:Nanoscale Research Letters
Subjects:
Molecular beam epitaxy
Single lateral mode
InAs/InGaAs quantum dot
Pulsed anodic oxidation
Laser diode
Online Access:http://dx.doi.org/10.1007/s11671-007-9066-4

Internet

http://dx.doi.org/10.1007/s11671-007-9066-4

Similar Items