NUMERICAL SIMULATION OF THE INFLUENCE OF RADIATION ON THE MOS DEVICES PARAMETERS
A model describing the space-time evolution of the charge which arises in the dielectric struc-ture of metal-insulator-semiconductor under ionizing radiation of X-ray and gamma-rays is consi-dered. The system of equations is solved by the numerical method. For realization of the difference problem a...
| Main Authors: | , , |
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| Format: | Article |
| Language: | Russian |
| Published: |
The United Institute of Informatics Problems of the National Academy of Sciences of Belarus
2016-10-01
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| Series: | Informatika |
| Online Access: | https://inf.grid.by/jour/article/view/161 |