The Hydrogenation Impact on Electronic Properties of p-Diamond/n-Si Heterojunctions

The Hydrogenation Impact on Electronic Properties of p-Diamond/n-Si Heterojunctions

The undoped polycrystalline diamond films (PDFs) have been deposited on n-type silicon (Si) by Hot Filament Chemical Vapor Deposition (HF CVD) technique. The reaction gases are a mixture of methane and hydrogen. The obtained PDFs were characterized by scanning electron microscopy (SEM) and Raman spe...

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Bibliographic Details
Main Authors: Szymon Łoś, Kazimierz Fabisiak, Kazimierz Paprocki, Mirosław Szybowicz, Anna Dychalska, Ewa Spychaj-Fabisiak, Wojciech Franków
Format: Article
Language:English
Published: MDPI AG 2021-11-01
Series:Materials
Subjects:
CVD diamond
Raman spectroscopy
p-diamond/n-Si heterojunction
SEM
J-V/T characteristic
hydrogenation
Online Access:https://www.mdpi.com/1996-1944/14/21/6615

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https://www.mdpi.com/1996-1944/14/21/6615

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