Preparation and Investigation of Micro-Transfer-Printable Single-Crystalline InP Coupons for Heterogeneous Integration of III-V on Si
New requirements for high-frequency applications in wireless communication and sensor technologies need III-V compound semiconductors such as indium phosphide (InP) to complement silicon (Si)-based technologies. This study establishes the basis for a new approach to heterogeneous integration of III-...
| Main Authors: | , , , , , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2023-07-01
|
| Series: | Crystals |
| Subjects: | |
| Online Access: | https://www.mdpi.com/2073-4352/13/7/1126 |
| _version_ | 1797589633067909120 |
|---|---|
| author | Isabella Peracchi Carsten Richter Tobias Schulz Jens Martin Albert Kwasniewski Sebastian Kläger Christiane Frank-Rotsch Patrick Steglich Karoline Stolze |
| author_facet | Isabella Peracchi Carsten Richter Tobias Schulz Jens Martin Albert Kwasniewski Sebastian Kläger Christiane Frank-Rotsch Patrick Steglich Karoline Stolze |
| author_sort | Isabella Peracchi |
| collection | DOAJ |
| description | New requirements for high-frequency applications in wireless communication and sensor technologies need III-V compound semiconductors such as indium phosphide (InP) to complement silicon (Si)-based technologies. This study establishes the basis for a new approach to heterogeneous integration of III-V on Si aimed at the transfer of single-crystalline InP coupons on Si via micro-transfer printing (μTP). The InP coupons will act as high-quality virtual substrates that allow selective homo-epitaxy. We present the chemical-mechanical polishing-based preparation and structural characterization of µm-thin (001) InP platelets, starting from high-quality 4-inch bulk crystals and micro-patterning into transferable coupons of several hundred µm<sup>2</sup>. The obtained InP platelets exhibit the desired thickness—below 10 ± 1 µm—and low surface roughness—<0.3 nm—on both sides, meeting the precondition for µTP and epitaxy. X-ray rocking curve measurements provide accurate spatial maps of the total strain, which indicate small strain variations in the µm-thin InP sample. Rocking curve mappings of the (0 0 4) reflection reveal half-widths below 16 arcsec in the majority of the sample area after thinning that is similar to commercially available InP bulk substrates. Pole figure measurements show no evidence of stress-induced micro-twinning or stacking faults. Overall, minor indications of crystal quality degradation in the product platelets, compared with the bulk samples, were detected. |
| first_indexed | 2024-03-11T01:10:19Z |
| format | Article |
| id | doaj.art-02648caaee4f445f9062a500a377aaa6 |
| institution | Directory Open Access Journal |
| issn | 2073-4352 |
| language | English |
| last_indexed | 2024-03-11T01:10:19Z |
| publishDate | 2023-07-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Crystals |
| spelling | doaj.art-02648caaee4f445f9062a500a377aaa62023-11-18T18:54:51ZengMDPI AGCrystals2073-43522023-07-01137112610.3390/cryst13071126Preparation and Investigation of Micro-Transfer-Printable Single-Crystalline InP Coupons for Heterogeneous Integration of III-V on SiIsabella Peracchi0Carsten Richter1Tobias Schulz2Jens Martin3Albert Kwasniewski4Sebastian Kläger5Christiane Frank-Rotsch6Patrick Steglich7Karoline Stolze8Leibniz-Institut für Kristallzüchtung (IKZ), 12489 Berlin, GermanyLeibniz-Institut für Kristallzüchtung (IKZ), 12489 Berlin, GermanyLeibniz-Institut für Kristallzüchtung (IKZ), 12489 Berlin, GermanyLeibniz-Institut für Kristallzüchtung (IKZ), 12489 Berlin, GermanyLeibniz-Institut für Kristallzüchtung (IKZ), 12489 Berlin, GermanyLeibniz-Institut für Kristallzüchtung (IKZ), 12489 Berlin, GermanyLeibniz-Institut für Kristallzüchtung (IKZ), 12489 Berlin, GermanyIHP—Leibniz-Institut für Innovative Mikroelektronik, 15236 Frankfurt (Oder), GermanyLeibniz-Institut für Kristallzüchtung (IKZ), 12489 Berlin, GermanyNew requirements for high-frequency applications in wireless communication and sensor technologies need III-V compound semiconductors such as indium phosphide (InP) to complement silicon (Si)-based technologies. This study establishes the basis for a new approach to heterogeneous integration of III-V on Si aimed at the transfer of single-crystalline InP coupons on Si via micro-transfer printing (μTP). The InP coupons will act as high-quality virtual substrates that allow selective homo-epitaxy. We present the chemical-mechanical polishing-based preparation and structural characterization of µm-thin (001) InP platelets, starting from high-quality 4-inch bulk crystals and micro-patterning into transferable coupons of several hundred µm<sup>2</sup>. The obtained InP platelets exhibit the desired thickness—below 10 ± 1 µm—and low surface roughness—<0.3 nm—on both sides, meeting the precondition for µTP and epitaxy. X-ray rocking curve measurements provide accurate spatial maps of the total strain, which indicate small strain variations in the µm-thin InP sample. Rocking curve mappings of the (0 0 4) reflection reveal half-widths below 16 arcsec in the majority of the sample area after thinning that is similar to commercially available InP bulk substrates. Pole figure measurements show no evidence of stress-induced micro-twinning or stacking faults. Overall, minor indications of crystal quality degradation in the product platelets, compared with the bulk samples, were detected.https://www.mdpi.com/2073-4352/13/7/1126indium phosphidecompound semiconductor crystalsIII-V on SiCMPX-ray diffractionrocking curve imaging |
| spellingShingle | Isabella Peracchi Carsten Richter Tobias Schulz Jens Martin Albert Kwasniewski Sebastian Kläger Christiane Frank-Rotsch Patrick Steglich Karoline Stolze Preparation and Investigation of Micro-Transfer-Printable Single-Crystalline InP Coupons for Heterogeneous Integration of III-V on Si Crystals indium phosphide compound semiconductor crystals III-V on Si CMP X-ray diffraction rocking curve imaging |
| title | Preparation and Investigation of Micro-Transfer-Printable Single-Crystalline InP Coupons for Heterogeneous Integration of III-V on Si |
| title_full | Preparation and Investigation of Micro-Transfer-Printable Single-Crystalline InP Coupons for Heterogeneous Integration of III-V on Si |
| title_fullStr | Preparation and Investigation of Micro-Transfer-Printable Single-Crystalline InP Coupons for Heterogeneous Integration of III-V on Si |
| title_full_unstemmed | Preparation and Investigation of Micro-Transfer-Printable Single-Crystalline InP Coupons for Heterogeneous Integration of III-V on Si |
| title_short | Preparation and Investigation of Micro-Transfer-Printable Single-Crystalline InP Coupons for Heterogeneous Integration of III-V on Si |
| title_sort | preparation and investigation of micro transfer printable single crystalline inp coupons for heterogeneous integration of iii v on si |
| topic | indium phosphide compound semiconductor crystals III-V on Si CMP X-ray diffraction rocking curve imaging |
| url | https://www.mdpi.com/2073-4352/13/7/1126 |
| work_keys_str_mv | AT isabellaperacchi preparationandinvestigationofmicrotransferprintablesinglecrystallineinpcouponsforheterogeneousintegrationofiiivonsi AT carstenrichter preparationandinvestigationofmicrotransferprintablesinglecrystallineinpcouponsforheterogeneousintegrationofiiivonsi AT tobiasschulz preparationandinvestigationofmicrotransferprintablesinglecrystallineinpcouponsforheterogeneousintegrationofiiivonsi AT jensmartin preparationandinvestigationofmicrotransferprintablesinglecrystallineinpcouponsforheterogeneousintegrationofiiivonsi AT albertkwasniewski preparationandinvestigationofmicrotransferprintablesinglecrystallineinpcouponsforheterogeneousintegrationofiiivonsi AT sebastianklager preparationandinvestigationofmicrotransferprintablesinglecrystallineinpcouponsforheterogeneousintegrationofiiivonsi AT christianefrankrotsch preparationandinvestigationofmicrotransferprintablesinglecrystallineinpcouponsforheterogeneousintegrationofiiivonsi AT patricksteglich preparationandinvestigationofmicrotransferprintablesinglecrystallineinpcouponsforheterogeneousintegrationofiiivonsi AT karolinestolze preparationandinvestigationofmicrotransferprintablesinglecrystallineinpcouponsforheterogeneousintegrationofiiivonsi |