Effect of HF Concentration on the PS Structures Prepared by Photoelectrochemical Etching
Porous silicon was fabricated at p-n junction wafer byphotoelectrochemical (PEC) etching. Silicon wafer with various electrolytecontaining different HF concentrations was used to explain PS formation by thereaction at the Si/ electrolyte interface. An investigation of the dependence on HFconcentrati...
| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
Unviversity of Technology- Iraq
2010-05-01
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| Series: | Engineering and Technology Journal |
| Subjects: | |
| Online Access: | https://etj.uotechnology.edu.iq/article_27652_e6483617be65ece9e9a7c37c62430ee6.pdf |