Effect of HF Concentration on the PS Structures Prepared by Photoelectrochemical Etching
Porous silicon was fabricated at p-n junction wafer byphotoelectrochemical (PEC) etching. Silicon wafer with various electrolytecontaining different HF concentrations was used to explain PS formation by thereaction at the Si/ electrolyte interface. An investigation of the dependence on HFconcentrati...
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| Format: | Article |
| Language: | English |
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Unviversity of Technology- Iraq
2010-05-01
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| Series: | Engineering and Technology Journal |
| Subjects: | |
| Online Access: | https://etj.uotechnology.edu.iq/article_27652_e6483617be65ece9e9a7c37c62430ee6.pdf |
| _version_ | 1827358255327739904 |
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| author | Yasmeen Z. Dawood Bassam G. Rasheed Ali H. AL-Hamdani |
| author_facet | Yasmeen Z. Dawood Bassam G. Rasheed Ali H. AL-Hamdani |
| author_sort | Yasmeen Z. Dawood |
| collection | DOAJ |
| description | Porous silicon was fabricated at p-n junction wafer byphotoelectrochemical (PEC) etching. Silicon wafer with various electrolytecontaining different HF concentrations was used to explain PS formation by thereaction at the Si/ electrolyte interface. An investigation of the dependence on HFconcentration to formed PS layer was made. The surface morphology of PS layerwas study as a function of HF concentration. Pillar like structures are formed atlow HF concentration and pores structures are obtained a at higher HFconcentration (40%). The etching rate increases with increasing HF concentrationcausing faster silicon dissolution. Thus the total pillar volume would increase byincreasing the HF concentration. |
| first_indexed | 2024-03-08T06:08:09Z |
| format | Article |
| id | doaj.art-0267d0ffa39e482bad6b122985e8545d |
| institution | Directory Open Access Journal |
| issn | 1681-6900 2412-0758 |
| language | English |
| last_indexed | 2024-03-08T06:08:09Z |
| publishDate | 2010-05-01 |
| publisher | Unviversity of Technology- Iraq |
| record_format | Article |
| series | Engineering and Technology Journal |
| spelling | doaj.art-0267d0ffa39e482bad6b122985e8545d2024-02-04T17:45:35ZengUnviversity of Technology- IraqEngineering and Technology Journal1681-69002412-07582010-05-0128112143215010.30684/etj.28.11.527652Effect of HF Concentration on the PS Structures Prepared by Photoelectrochemical EtchingYasmeen Z. DawoodBassam G. RasheedAli H. AL-HamdaniPorous silicon was fabricated at p-n junction wafer byphotoelectrochemical (PEC) etching. Silicon wafer with various electrolytecontaining different HF concentrations was used to explain PS formation by thereaction at the Si/ electrolyte interface. An investigation of the dependence on HFconcentration to formed PS layer was made. The surface morphology of PS layerwas study as a function of HF concentration. Pillar like structures are formed atlow HF concentration and pores structures are obtained a at higher HFconcentration (40%). The etching rate increases with increasing HF concentrationcausing faster silicon dissolution. Thus the total pillar volume would increase byincreasing the HF concentration.https://etj.uotechnology.edu.iq/article_27652_e6483617be65ece9e9a7c37c62430ee6.pdfporous siliconphoto electrochemical etchingetching ratehf concentration |
| spellingShingle | Yasmeen Z. Dawood Bassam G. Rasheed Ali H. AL-Hamdani Effect of HF Concentration on the PS Structures Prepared by Photoelectrochemical Etching Engineering and Technology Journal porous silicon photo electrochemical etching etching rate hf concentration |
| title | Effect of HF Concentration on the PS Structures Prepared by Photoelectrochemical Etching |
| title_full | Effect of HF Concentration on the PS Structures Prepared by Photoelectrochemical Etching |
| title_fullStr | Effect of HF Concentration on the PS Structures Prepared by Photoelectrochemical Etching |
| title_full_unstemmed | Effect of HF Concentration on the PS Structures Prepared by Photoelectrochemical Etching |
| title_short | Effect of HF Concentration on the PS Structures Prepared by Photoelectrochemical Etching |
| title_sort | effect of hf concentration on the ps structures prepared by photoelectrochemical etching |
| topic | porous silicon photo electrochemical etching etching rate hf concentration |
| url | https://etj.uotechnology.edu.iq/article_27652_e6483617be65ece9e9a7c37c62430ee6.pdf |
| work_keys_str_mv | AT yasmeenzdawood effectofhfconcentrationonthepsstructurespreparedbyphotoelectrochemicaletching AT bassamgrasheed effectofhfconcentrationonthepsstructurespreparedbyphotoelectrochemicaletching AT alihalhamdani effectofhfconcentrationonthepsstructurespreparedbyphotoelectrochemicaletching |