Improving Optical and Electrical Properties of GaN Epitaxial Wafers and Enhancing Luminescent Properties of GaN-Based Light-Emitting-Diode with Excimer Laser Irradiation
The effect of KrF excimer laser irradiation on the optical and electrical properties of epitaxial wafers with a <i>p</i>-GaN surface were investigated at different laser energy densities and pulse numbers. The laser-irradiated samples were annealed in oxygen. The laser irradiation-induce...
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MDPI AG
2021-10-01
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| Online Access: | https://www.mdpi.com/2073-8994/13/10/1935 |
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| author | Yijian Jiang Haoqi Tan Yan Zhao |
| author_facet | Yijian Jiang Haoqi Tan Yan Zhao |
| author_sort | Yijian Jiang |
| collection | DOAJ |
| description | The effect of KrF excimer laser irradiation on the optical and electrical properties of epitaxial wafers with a <i>p</i>-GaN surface were investigated at different laser energy densities and pulse numbers. The laser-irradiated samples were annealed in oxygen. The laser irradiation-induced changes in optical and electrical properties of GaN epitaxial wafers were examined using PL, I–V, XPS, SIMS, and Hall effect measurements. Experimental results show that under an appropriate laser-irradiated condition, optical and electrical properties of the samples were improved to different degrees. The samples which were annealed after laser irradiation have better electrical properties such as the hole concentration and sheet resistance than those without annealing. We hypothesize that the pulsed KrF excimer laser irradiation dissociates the Mg–H complexes and annealing treatment allows the hydrogen to diffuse out more completely under the oxygen atmosphere at a proper temperature, by which the crystalline symmetry of GaN is improved. Under appropriate laser conditions and O<sub>2</sub>-activated annealing, the light output of the laser-irradiated GaN-based LED sample is about 1.44 times that of a conventional LED at 20 mA. It is found that the wall-plug efficiency is 10% higher at 20 mA and the reverse leakage current is 80% lower at 5 V. |
| first_indexed | 2024-03-10T06:10:02Z |
| format | Article |
| id | doaj.art-02694263c095410fb10002b229e967cc |
| institution | Directory Open Access Journal |
| issn | 2073-8994 |
| language | English |
| last_indexed | 2024-03-10T06:10:02Z |
| publishDate | 2021-10-01 |
| publisher | MDPI AG |
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| series | Symmetry |
| spelling | doaj.art-02694263c095410fb10002b229e967cc2023-11-22T20:11:17ZengMDPI AGSymmetry2073-89942021-10-011310193510.3390/sym13101935Improving Optical and Electrical Properties of GaN Epitaxial Wafers and Enhancing Luminescent Properties of GaN-Based Light-Emitting-Diode with Excimer Laser IrradiationYijian Jiang0Haoqi Tan1Yan Zhao2Institute of Laser Engineering, Faculty of Materials and Manufacturing, Beijing University of Technology, Beijing 100124, ChinaInstitute of Laser Engineering, Faculty of Materials and Manufacturing, Beijing University of Technology, Beijing 100124, ChinaInstitute of Laser Engineering, Faculty of Materials and Manufacturing, Beijing University of Technology, Beijing 100124, ChinaThe effect of KrF excimer laser irradiation on the optical and electrical properties of epitaxial wafers with a <i>p</i>-GaN surface were investigated at different laser energy densities and pulse numbers. The laser-irradiated samples were annealed in oxygen. The laser irradiation-induced changes in optical and electrical properties of GaN epitaxial wafers were examined using PL, I–V, XPS, SIMS, and Hall effect measurements. Experimental results show that under an appropriate laser-irradiated condition, optical and electrical properties of the samples were improved to different degrees. The samples which were annealed after laser irradiation have better electrical properties such as the hole concentration and sheet resistance than those without annealing. We hypothesize that the pulsed KrF excimer laser irradiation dissociates the Mg–H complexes and annealing treatment allows the hydrogen to diffuse out more completely under the oxygen atmosphere at a proper temperature, by which the crystalline symmetry of GaN is improved. Under appropriate laser conditions and O<sub>2</sub>-activated annealing, the light output of the laser-irradiated GaN-based LED sample is about 1.44 times that of a conventional LED at 20 mA. It is found that the wall-plug efficiency is 10% higher at 20 mA and the reverse leakage current is 80% lower at 5 V.https://www.mdpi.com/2073-8994/13/10/1935excimer laser irradiationGaN epitaxial wafersGaN-based LEDoptical propertyelectrical property |
| spellingShingle | Yijian Jiang Haoqi Tan Yan Zhao Improving Optical and Electrical Properties of GaN Epitaxial Wafers and Enhancing Luminescent Properties of GaN-Based Light-Emitting-Diode with Excimer Laser Irradiation Symmetry excimer laser irradiation GaN epitaxial wafers GaN-based LED optical property electrical property |
| title | Improving Optical and Electrical Properties of GaN Epitaxial Wafers and Enhancing Luminescent Properties of GaN-Based Light-Emitting-Diode with Excimer Laser Irradiation |
| title_full | Improving Optical and Electrical Properties of GaN Epitaxial Wafers and Enhancing Luminescent Properties of GaN-Based Light-Emitting-Diode with Excimer Laser Irradiation |
| title_fullStr | Improving Optical and Electrical Properties of GaN Epitaxial Wafers and Enhancing Luminescent Properties of GaN-Based Light-Emitting-Diode with Excimer Laser Irradiation |
| title_full_unstemmed | Improving Optical and Electrical Properties of GaN Epitaxial Wafers and Enhancing Luminescent Properties of GaN-Based Light-Emitting-Diode with Excimer Laser Irradiation |
| title_short | Improving Optical and Electrical Properties of GaN Epitaxial Wafers and Enhancing Luminescent Properties of GaN-Based Light-Emitting-Diode with Excimer Laser Irradiation |
| title_sort | improving optical and electrical properties of gan epitaxial wafers and enhancing luminescent properties of gan based light emitting diode with excimer laser irradiation |
| topic | excimer laser irradiation GaN epitaxial wafers GaN-based LED optical property electrical property |
| url | https://www.mdpi.com/2073-8994/13/10/1935 |
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