Improving Optical and Electrical Properties of GaN Epitaxial Wafers and Enhancing Luminescent Properties of GaN-Based Light-Emitting-Diode with Excimer Laser Irradiation

Improving Optical and Electrical Properties of GaN Epitaxial Wafers and Enhancing Luminescent Properties of GaN-Based Light-Emitting-Diode with Excimer Laser Irradiation

The effect of KrF excimer laser irradiation on the optical and electrical properties of epitaxial wafers with a <i>p</i>-GaN surface were investigated at different laser energy densities and pulse numbers. The laser-irradiated samples were annealed in oxygen. The laser irradiation-induce...

Full description

Bibliographic Details
Main Authors:	Yijian Jiang, Haoqi Tan, Yan Zhao
Format:	Article
Language:	English
Published:	MDPI AG 2021-10-01
Series:	Symmetry
Subjects:	excimer laser irradiation GaN epitaxial wafers GaN-based LED optical property electrical property
Online Access:	https://www.mdpi.com/2073-8994/13/10/1935

Similar Items

MOCVD Growth and Investigation of InGaN/GaN Heterostructure Grown on AlGaN/GaN-on-Si Template
by: Haruka Matsuura, et al.
Published: (2019-04-01)

Passivation of Surface States in GaN by NiO Particles
by: Martin Velazquez-Rizo, et al.
Published: (2022-01-01)

Physics-Based TCAD Simulation and Calibration of 600 V GaN/AlGaN/GaN Device Characteristics and Analysis of Interface Traps
by: Yu-Lin Song, et al.
Published: (2021-06-01)

A Simulation Optimization Factor of Si(111)-Based AlGaN/GaN Epitaxy for High Frequency and Low-Voltage-Control High Electron Mobility Transistor Application
by: He Guan, et al.
Published: (2023-01-01)

Progress in Near-Equilibrium Ammonothermal (NEAT) Growth of GaN Substrates for GaN-on-GaN Semiconductor Devices
by: Tadao Hashimoto, et al.
Published: (2022-08-01)

First demonstration of high-frequency InAlN/GaN high-electron-mobility transistor using GaN-on-insulator technology via 200 mm wafer bonding
by: Li, Hanchao, et al.
Published: (2024)

GaN Monolithic PWM Generator With Dynamic Offset Compensation
by: Katia Samperi, et al.
Published: (2023-01-01)

p-GaN Selective Passivation via H Ion Implantation to Obtain a p-GaN Gate Normally off AlGaN/GaN HEMT
by: Xiaoyu Ding, et al.
Published: (2023-03-01)

Optical Properties of GaN Thin Flim
by: Salma M. Shaban
Published: (2009-12-01)

Analysis of electrical properties in lateral Schottky barrier diode based on n-GaN and AlGaN/GaN heterostructure
by: Honghui Liu, et al.
Published: (2022-11-01)

Reverse Leakage Analysis for As-Grown and Regrown Vertical GaN-on-GaN Schottky Barrier Diodes
by: Kai Fu, et al.
Published: (2020-01-01)

Vertical GaN-on-GaN Schottky diodes as α-particle radiation sensors
by: Sandupatla, Abhinay, et al.
Published: (2020)

Unidirectional Operation of p-GaN Gate AlGaN/GaN Heterojunction FET Using Rectifying Drain Electrode
by: Tae-Hyeon Kim, et al.
Published: (2021-03-01)

Research Progress and Development Prospects of Enhanced GaN HEMTs
by: Lili Han, et al.
Published: (2023-06-01)

E/D-Mode GaN Inverter on a 150-mm Si Wafer Based on p-GaN Gate E-Mode HEMT Technology
by: Li-Fang Jia, et al.
Published: (2021-05-01)

1.3 kV Vertical GaN-Based Trench MOSFETs on 4-Inch Free Standing GaN Wafer
by: Wei He, et al.
Published: (2022-01-01)

Indium-Incorporation with In<sub>x</sub>Ga<sub>1-x</sub>N Layers on GaN-Microdisks by Plasma-Assisted Molecular Beam Epitaxy
by: ChengDa Tsai, et al.
Published: (2019-06-01)

Fabrication and Characterization of Nano-porous GaN Template for Strain Relaxed GaN Growth
by: Hartono, Haryono, et al.
Published: (2007)

Highly Reliable Temperature Sensor Based on p-GaN/AlGaN/GaN Hybrid Anode Diode with Wide Operation Temperature from 73 K to 573 K
by: An Yang, et al.
Published: (2023-04-01)

Fluorine-Based Low-Damage Selective Etching Process for E-Mode p-GaN/AlGaN/GaN HFET Fabrication
by: Hyeon-Ji Kim, et al.
Published: (2023-10-01)

GaN Vertical Transistors with Staircase Channels for High-Voltage Applications
by: Kuntal Barman, et al.
Published: (2023-01-01)

GaN Laser Diode Technology for Visible-Light Communications
by: Stephen P. Najda, et al.
Published: (2022-04-01)

Effect of X-ray irradiation on threshold voltage of AlGaN/GaN HEMTs with p-GaN and MIS Gates
by: Yongle Qi, et al.
Published: (2020-12-01)

Diamond/GaN HEMTs: Where from and Where to?
by: Joana C. Mendes, et al.
Published: (2022-01-01)

Simulation Study on the Structure Design of p-GaN/AlGaN/GaN HEMT-Based Ultraviolet Phototransistors
by: Haiping Wang, et al.
Published: (2022-12-01)

Characterization of Defects in GaN: Optical and Magnetic Resonance Techniques
by: Jaime A. Freitas, et al.
Published: (2022-09-01)

Investigation of Forward Tunneling Characteristics of InGaN/GaN Blue Light-Emitting Diodes on Freestanding GaN Detached from a Si Substrate
by: Moonsang Lee, et al.
Published: (2018-07-01)

RF-MBE growth and orientation control of GaN on epitaxial graphene
by: Ashraful G. Bhuiyan, et al.
Published: (2021-01-01)

Optical Properties of GaN-Based Green Light-Emitting Diodes Influenced by Low-Temperature p-GaN Layer
by: Jianfei Li, et al.
Published: (2021-11-01)

Improvement of interface morphology and luminescence properties of InGaN/GaN multiple quantum wells by thermal annealing treatment
by: Yufei Hou, et al.
Published: (2021-12-01)

Selective Area Epitaxy of GaN Nanowires on Si Substrates Using Microsphere Lithography: Experiment and Theory
by: Vladislav O. Gridchin, et al.
Published: (2022-07-01)

Anisotropic Strain on GaN Microdisks Grown by Plasma-Assisted Molecular Beam Epitaxy
by: Hong-Yi Yang, et al.
Published: (2020-10-01)

Fully Relaxed, Crack-Free AlGaN with upto 50% Al Composition Grown on Porous GaN Pseudo-Substrate
by: Nirupam Hatui, et al.
Published: (2022-07-01)

Asymmetric GaN High Electron Mobility Transistors Design with InAlN Barrier at Source Side and AlGaN Barrier at Drain Side
by: Beibei Lv, et al.
Published: (2024-02-01)

Filtering of Defects in Semipolar (11−22) GaN Using 2-Steps Lateral Epitaxial Overgrowth
by: Kriouche N, et al.
Published: (2010-01-01)

Effect of High-Pressure GaN Nucleation Layer on the Performance of AlGaN/GaN HEMTs on Si Substrate
by: You-Chen Weng, et al.
Published: (2023-04-01)

Influence of Growth Polarity Switching on the Optical and Electrical Properties of GaN/AlGaN Nanowire LEDs
by: Anna Reszka, et al.
Published: (2020-12-01)

Advances in GaN Crystals and Their Applications
by: Ikai Lo
Published: (2018-03-01)

Demonstration of Acceptor-Like Traps at Positive Polarization Interfaces in Ga-Polar P-type (AlGaN/AlN)/GaN Superlattices
by: Athith Krishna, et al.
Published: (2022-05-01)

N-polar GaN Film Epitaxy on Sapphire Substrate without Intentional Nitridation
by: Zhaole Su, et al.
Published: (2022-04-01)