Analytical subthreshold swing model of junctionless elliptic gate-all-around (GAA) FET
An analytical subthreshold swing (SS) model has been presented to determine the SS of an elliptic junctionless gate-all-around field-effect transistor (GAA FET). The analysis of a GAA FET with an elliptic cross-section is essential because it is difficult to manufacture a GAA FET with an accurate ci...
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| Format: | Article |
| Language: | English |
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AIMS Press
2024-04-01
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| Series: | AIMS Electronics and Electrical Engineering |
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| Online Access: | https://www.aimspress.com/article/doi/10.3934/electreng.2024009 |