Flicker Noise (1/<italic>f</italic>) in 45-nm PDSOI N-Channel FETs at Cryogenic Temperatures for Quantum Computing Applications
In this paper, we have investigated the flicker noise (1/<inline-formula> <tex-math notation="LaTeX">$f$ </tex-math></inline-formula>) in 45-nm RFSOI NFETs for quantum computing applications. 1/<inline-formula> <tex-math notation="LaTeX">$f$ &l...
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IEEE
2024-01-01
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| Series: | IEEE Journal of the Electron Devices Society |
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| Online Access: | https://ieeexplore.ieee.org/document/10433783/ |
| _version_ | 1797293271930634240 |
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| author | Shruti Pathak Sumreti Gupta P. Srinivasan Oscar H. Gonzalez Fernando Guarin Abhisek Dixit |
| author_facet | Shruti Pathak Sumreti Gupta P. Srinivasan Oscar H. Gonzalez Fernando Guarin Abhisek Dixit |
| author_sort | Shruti Pathak |
| collection | DOAJ |
| description | In this paper, we have investigated the flicker noise (1/<inline-formula> <tex-math notation="LaTeX">$f$ </tex-math></inline-formula>) in 45-nm RFSOI NFETs for quantum computing applications. 1/<inline-formula> <tex-math notation="LaTeX">$f$ </tex-math></inline-formula> noise characterization and analysis were performed in linear region at cryogenic temperatures down to 10K. A Lorentzian-like noise is also observed depending on bias conditions, possibly due to the floating body of PDSOI. The extracted frequency exponent <inline-formula> <tex-math notation="LaTeX">$(\gamma)$ </tex-math></inline-formula> shows an inverted U-shape behavior with temperature mainly attributed to non-uniform energy distribution of traps in the gate dielectric. The dominant source of 1/<inline-formula> <tex-math notation="LaTeX">$f$ </tex-math></inline-formula> noise is carrier number fluctuation. Thermal-activation behavior of 1/<inline-formula> <tex-math notation="LaTeX">$f$ </tex-math></inline-formula> noise is studied, which shows the traps responsible for noise are not thermally activated. Volume trap densities are also extracted from 300K down to 10K. The volume trap density increases with a decrease in temperature, but no significant increase in normalized noise is observed at cryogenic temperatures in the measured NFETs. The non-uniform distribution along with the thermal inactive behavior of traps over the studied temperature range is expected to be a plausible reason for the temperature-independent behavior of normalized noise. |
| first_indexed | 2024-03-07T20:10:29Z |
| format | Article |
| id | doaj.art-02a40d6a898a47ec9ffbf7c3f449b03a |
| institution | Directory Open Access Journal |
| issn | 2168-6734 |
| language | English |
| last_indexed | 2024-03-07T20:10:29Z |
| publishDate | 2024-01-01 |
| publisher | IEEE |
| record_format | Article |
| series | IEEE Journal of the Electron Devices Society |
| spelling | doaj.art-02a40d6a898a47ec9ffbf7c3f449b03a2024-02-28T00:00:22ZengIEEEIEEE Journal of the Electron Devices Society2168-67342024-01-011213814410.1109/JEDS.2024.336521610433783Flicker Noise (1/<italic>f</italic>) in 45-nm PDSOI N-Channel FETs at Cryogenic Temperatures for Quantum Computing ApplicationsShruti Pathak0https://orcid.org/0000-0001-7595-5205Sumreti Gupta1P. Srinivasan2https://orcid.org/0000-0002-9973-5212Oscar H. Gonzalez3Fernando Guarin4Abhisek Dixit5https://orcid.org/0000-0002-2244-1697Department of Electrical Engineering, Indian Institute of Technology Delhi, New Delhi, IndiaDepartment of Electrical Engineering, Indian Institute of Technology Delhi, New Delhi, IndiaGlobal Reliability Department, GlobalFoundries, Malta, NY, USAGlobal Reliability Department, GlobalFoundries, Malta, NY, USAGlobal Reliability Department, GlobalFoundries, Malta, NY, USADepartment of Electrical Engineering, Indian Institute of Technology Delhi, New Delhi, IndiaIn this paper, we have investigated the flicker noise (1/<inline-formula> <tex-math notation="LaTeX">$f$ </tex-math></inline-formula>) in 45-nm RFSOI NFETs for quantum computing applications. 1/<inline-formula> <tex-math notation="LaTeX">$f$ </tex-math></inline-formula> noise characterization and analysis were performed in linear region at cryogenic temperatures down to 10K. A Lorentzian-like noise is also observed depending on bias conditions, possibly due to the floating body of PDSOI. The extracted frequency exponent <inline-formula> <tex-math notation="LaTeX">$(\gamma)$ </tex-math></inline-formula> shows an inverted U-shape behavior with temperature mainly attributed to non-uniform energy distribution of traps in the gate dielectric. The dominant source of 1/<inline-formula> <tex-math notation="LaTeX">$f$ </tex-math></inline-formula> noise is carrier number fluctuation. Thermal-activation behavior of 1/<inline-formula> <tex-math notation="LaTeX">$f$ </tex-math></inline-formula> noise is studied, which shows the traps responsible for noise are not thermally activated. Volume trap densities are also extracted from 300K down to 10K. The volume trap density increases with a decrease in temperature, but no significant increase in normalized noise is observed at cryogenic temperatures in the measured NFETs. The non-uniform distribution along with the thermal inactive behavior of traps over the studied temperature range is expected to be a plausible reason for the temperature-independent behavior of normalized noise.https://ieeexplore.ieee.org/document/10433783/Cryogenic temperaturefrequency exponentflicker noiseinterface trapsnoise modelPDSOI |
| spellingShingle | Shruti Pathak Sumreti Gupta P. Srinivasan Oscar H. Gonzalez Fernando Guarin Abhisek Dixit Flicker Noise (1/<italic>f</italic>) in 45-nm PDSOI N-Channel FETs at Cryogenic Temperatures for Quantum Computing Applications IEEE Journal of the Electron Devices Society Cryogenic temperature frequency exponent flicker noise interface traps noise model PDSOI |
| title | Flicker Noise (1/<italic>f</italic>) in 45-nm PDSOI N-Channel FETs at Cryogenic Temperatures for Quantum Computing Applications |
| title_full | Flicker Noise (1/<italic>f</italic>) in 45-nm PDSOI N-Channel FETs at Cryogenic Temperatures for Quantum Computing Applications |
| title_fullStr | Flicker Noise (1/<italic>f</italic>) in 45-nm PDSOI N-Channel FETs at Cryogenic Temperatures for Quantum Computing Applications |
| title_full_unstemmed | Flicker Noise (1/<italic>f</italic>) in 45-nm PDSOI N-Channel FETs at Cryogenic Temperatures for Quantum Computing Applications |
| title_short | Flicker Noise (1/<italic>f</italic>) in 45-nm PDSOI N-Channel FETs at Cryogenic Temperatures for Quantum Computing Applications |
| title_sort | flicker noise 1 italic f italic in 45 nm pdsoi n channel fets at cryogenic temperatures for quantum computing applications |
| topic | Cryogenic temperature frequency exponent flicker noise interface traps noise model PDSOI |
| url | https://ieeexplore.ieee.org/document/10433783/ |
| work_keys_str_mv | AT shrutipathak flickernoise1italicfitalicin45nmpdsoinchannelfetsatcryogenictemperaturesforquantumcomputingapplications AT sumretigupta flickernoise1italicfitalicin45nmpdsoinchannelfetsatcryogenictemperaturesforquantumcomputingapplications AT psrinivasan flickernoise1italicfitalicin45nmpdsoinchannelfetsatcryogenictemperaturesforquantumcomputingapplications AT oscarhgonzalez flickernoise1italicfitalicin45nmpdsoinchannelfetsatcryogenictemperaturesforquantumcomputingapplications AT fernandoguarin flickernoise1italicfitalicin45nmpdsoinchannelfetsatcryogenictemperaturesforquantumcomputingapplications AT abhisekdixit flickernoise1italicfitalicin45nmpdsoinchannelfetsatcryogenictemperaturesforquantumcomputingapplications |