Equivalent Circuit Modeling of a Dual-Gate Graphene FET
This paper presents a simple and comprehensive model of a dual-gate graphene field effect transistor (FET). The quantum capacitance and surface potential dependence on the top-gate-to-source voltage were studied for monolayer and bilayer graphene channel by using equivalent circuit modeling. Additio...
| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2020-12-01
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| Series: | Electronics |
| Subjects: | |
| Online Access: | https://www.mdpi.com/2079-9292/10/1/63 |