Electrically Active Defects in SiC Power MOSFETs
The performance and reliability of the state-of-the-art power 4H-SiC metal–oxide–semiconductor field-effect transistors (MOSFETs) are affected by electrically active defects at and near the interface between SiC and the gate dielectric. Specifically, these defects impact the channel-carrier mobility...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2023-02-01
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| Series: | Energies |
| Subjects: | |
| Online Access: | https://www.mdpi.com/1996-1073/16/4/1771 |