Fabrication and characterization of porous silicon for humidity sensor application
Porous Silicon (PS) layer has been prepared from p-type silicon by electrochemical etching method. The morphology properties of PS samples that prepared with different current density has been study using atom force measurement (AFM) and it show that the Layer of pore has sponge like stricture and...
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| Format: | Article |
| Language: | English |
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University of Baghdad
2019-01-01
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| Series: | Iraqi Journal of Physics |
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| Online Access: | https://ijp.uobaghdad.edu.iq/index.php/physics/article/view/114 |