Performance Comparison of Si IGBT and SiC MOSFET Power Module Driving IPMSM or IM under WLTC

The cumulative inverter losses and power consumption of a silicon insulated gate bipolar transistor (Si IGBT) and three types of silicon carbide metal-oxide-semiconductor field-effect transistors (SiC MOSFETs) were evaluated on an electric motor test bench under a worldwide harmonized light vehicles...

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Bibliographic Details
Main Authors: Hirokatsu Umegami, Toshikazu Harada, Ken Nakahara
Format: Article
Language:English
Published: MDPI AG 2023-04-01
Series:World Electric Vehicle Journal
Subjects:
Online Access:https://www.mdpi.com/2032-6653/14/4/112