Spin Polarization and Magnetic Moment in Silicon Carbide Grown by the Method of Coordinated Substitution of Atoms

Spin Polarization and Magnetic Moment in Silicon Carbide Grown by the Method of Coordinated Substitution of Atoms

In the present work, a new method for obtaining silicon carbide of the cubic polytype 3C-SiC with silicon vacancies in a stable state is proposed theoretically and implemented experimentally. The idea of the method is that the silicon vacancies are first created by high-temperature annealing in a si...

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Bibliographic Details
Main Authors: Sergey A. Kukushkin, Andrey V. Osipov
Format: Article
Language:English
Published: MDPI AG 2021-09-01
Series:Materials
Subjects:
silicon carbide
spin polarization
half-metallic ferromagnet
solid-state spin
density-functional theory
Online Access:https://www.mdpi.com/1996-1944/14/19/5579

Internet

https://www.mdpi.com/1996-1944/14/19/5579

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