Spin Polarization and Magnetic Moment in Silicon Carbide Grown by the Method of Coordinated Substitution of Atoms
In the present work, a new method for obtaining silicon carbide of the cubic polytype 3C-SiC with silicon vacancies in a stable state is proposed theoretically and implemented experimentally. The idea of the method is that the silicon vacancies are first created by high-temperature annealing in a si...
| Main Authors: | , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2021-09-01
|
| Series: | Materials |
| Subjects: | |
| Online Access: | https://www.mdpi.com/1996-1944/14/19/5579 |
| _version_ | 1797516101790203904 |
|---|---|
| author | Sergey A. Kukushkin Andrey V. Osipov |
| author_facet | Sergey A. Kukushkin Andrey V. Osipov |
| author_sort | Sergey A. Kukushkin |
| collection | DOAJ |
| description | In the present work, a new method for obtaining silicon carbide of the cubic polytype 3C-SiC with silicon vacancies in a stable state is proposed theoretically and implemented experimentally. The idea of the method is that the silicon vacancies are first created by high-temperature annealing in a silicon substrate Si(111) doped with boron B, and only then is this silicon converted into 3C-SiC(111), due to a chemical reaction with carbon monoxide CO. A part of the silicon vacancies that have bypassed “chemical selection” during this transformation get into the SiC. As the process of SiC synthesis proceeds at temperatures of ~1350 °C, thermal fluctuations in the SiC force the carbon atom C adjacent to the vacancy to jump to its place. In this case, an almost flat cluster of four C atoms and an additional void right under it are formed. This stable state of the vacancy, by analogy with NV centers in diamond, is designated as a C<sub>4</sub>V center. The C<sub>4</sub>V centers in the grown 3C-SiC were detected experimentally by Raman spectroscopy and spectroscopic ellipsometry. Calculations performed by methods of density-functional theory have revealed that the C<sub>4</sub>V centers have a magnetic moment equal to the Bohr magneton μB and lead to spin polarization in the SiC if the concentration of C<sub>4</sub>V centers is sufficiently high. |
| first_indexed | 2024-03-10T06:56:34Z |
| format | Article |
| id | doaj.art-03013757fc9d48ae97185e03144054fd |
| institution | Directory Open Access Journal |
| issn | 1996-1944 |
| language | English |
| last_indexed | 2024-03-10T06:56:34Z |
| publishDate | 2021-09-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Materials |
| spelling | doaj.art-03013757fc9d48ae97185e03144054fd2023-11-22T16:23:56ZengMDPI AGMaterials1996-19442021-09-011419557910.3390/ma14195579Spin Polarization and Magnetic Moment in Silicon Carbide Grown by the Method of Coordinated Substitution of AtomsSergey A. Kukushkin0Andrey V. Osipov1Institute for Problems in Mechanical Engineering of the Russian Academy of Sciences, 199178 Saint-Petersburg, RussiaInstitute for Problems in Mechanical Engineering of the Russian Academy of Sciences, 199178 Saint-Petersburg, RussiaIn the present work, a new method for obtaining silicon carbide of the cubic polytype 3C-SiC with silicon vacancies in a stable state is proposed theoretically and implemented experimentally. The idea of the method is that the silicon vacancies are first created by high-temperature annealing in a silicon substrate Si(111) doped with boron B, and only then is this silicon converted into 3C-SiC(111), due to a chemical reaction with carbon monoxide CO. A part of the silicon vacancies that have bypassed “chemical selection” during this transformation get into the SiC. As the process of SiC synthesis proceeds at temperatures of ~1350 °C, thermal fluctuations in the SiC force the carbon atom C adjacent to the vacancy to jump to its place. In this case, an almost flat cluster of four C atoms and an additional void right under it are formed. This stable state of the vacancy, by analogy with NV centers in diamond, is designated as a C<sub>4</sub>V center. The C<sub>4</sub>V centers in the grown 3C-SiC were detected experimentally by Raman spectroscopy and spectroscopic ellipsometry. Calculations performed by methods of density-functional theory have revealed that the C<sub>4</sub>V centers have a magnetic moment equal to the Bohr magneton μB and lead to spin polarization in the SiC if the concentration of C<sub>4</sub>V centers is sufficiently high.https://www.mdpi.com/1996-1944/14/19/5579silicon carbidespin polarizationhalf-metallic ferromagnetsolid-state spindensity-functional theory |
| spellingShingle | Sergey A. Kukushkin Andrey V. Osipov Spin Polarization and Magnetic Moment in Silicon Carbide Grown by the Method of Coordinated Substitution of Atoms Materials silicon carbide spin polarization half-metallic ferromagnet solid-state spin density-functional theory |
| title | Spin Polarization and Magnetic Moment in Silicon Carbide Grown by the Method of Coordinated Substitution of Atoms |
| title_full | Spin Polarization and Magnetic Moment in Silicon Carbide Grown by the Method of Coordinated Substitution of Atoms |
| title_fullStr | Spin Polarization and Magnetic Moment in Silicon Carbide Grown by the Method of Coordinated Substitution of Atoms |
| title_full_unstemmed | Spin Polarization and Magnetic Moment in Silicon Carbide Grown by the Method of Coordinated Substitution of Atoms |
| title_short | Spin Polarization and Magnetic Moment in Silicon Carbide Grown by the Method of Coordinated Substitution of Atoms |
| title_sort | spin polarization and magnetic moment in silicon carbide grown by the method of coordinated substitution of atoms |
| topic | silicon carbide spin polarization half-metallic ferromagnet solid-state spin density-functional theory |
| url | https://www.mdpi.com/1996-1944/14/19/5579 |
| work_keys_str_mv | AT sergeyakukushkin spinpolarizationandmagneticmomentinsiliconcarbidegrownbythemethodofcoordinatedsubstitutionofatoms AT andreyvosipov spinpolarizationandmagneticmomentinsiliconcarbidegrownbythemethodofcoordinatedsubstitutionofatoms |