ESTIMATION OF THERMAL PARAMETERS OF POWER BIPOLAR TRANSISTORS BY THE METHOD OF THERMAL RELAXATION DIFFERENTIAL SPECTROMETRY

ESTIMATION OF THERMAL PARAMETERS OF POWER BIPOLAR TRANSISTORS BY THE METHOD OF THERMAL RELAXATION DIFFERENTIAL SPECTROMETRY

Thermal performance of electronic devices determines the stability and reliability of the equipment. This leads to the need for a detailed thermal analysis of semiconductor devices. The goal of the work is evaluation of thermal parameters of high-power bipolar transistors in plastic packages TO-252...

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Bibliographic Details
Main Authors: V. S. Niss, A. S. Vaskou, A. S. Turtsevich, A. F. Kerentsev, V. K. Kononenko
Format: Article
Language:English
Published: Belarusian National Technical University 2015-12-01
Series:Pribory i Metody Izmerenij
Subjects:
биполярный транзистор
тепловое сопротивление
сечение теплового потока
качество посадки
дефект припоя
Online Access:https://pimi.bntu.by/jour/article/view/230

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https://pimi.bntu.by/jour/article/view/230

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