Low-Temperature Migration-Enhanced Epitaxial Growth of High-Quality (InAs)<sub>4</sub>(GaAs)<sub>3</sub>/Be-Doped InAlAs Quantum Wells for THz Applications

Low-Temperature Migration-Enhanced Epitaxial Growth of High-Quality (InAs)<sub>4</sub>(GaAs)<sub>3</sub>/Be-Doped InAlAs Quantum Wells for THz Applications

This investigation explores the structural and electronic properties of low-temperature-grown (InAs)<sub>4</sub>(GaAs)<sub>3</sub>/Be-doped InAlAs and InGaAs/Be-doped InAlAs multiple quantum wells (MQWs), utilizing migration-enhanced epitaxy (MEE) and conventional molecular b...

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Bibliographic Details
Main Authors: Linsheng Liu, Zhen Deng, Guipeng Liu, Chongtao Kong, Hao Du, Ruolin Chen, Jianfeng Yan, Le Qin, Shuxiang Song, Xinhui Zhang, Wenxin Wang
Format: Article
Language:English
Published: MDPI AG 2024-04-01
Series:Crystals
Subjects:
migration-enhanced epitaxial growth
low-temperature growth
InGaAs quantum well
Online Access:https://www.mdpi.com/2073-4352/14/5/421

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https://www.mdpi.com/2073-4352/14/5/421

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