Enhanced Photoluminescence of Hydrogenated Amorphous Silicon Carbide Thin Films by Means of a Fast Thermal Annealing Process

Enhanced Photoluminescence of Hydrogenated Amorphous Silicon Carbide Thin Films by Means of a Fast Thermal Annealing Process

In this paper, the photoluminescence (PL) of hydrogenated amorphous silicon carbide (a-Si<sub>1−x</sub>C<sub>x</sub>:H) thin films obtained by Plasma Enhancement Chemical Vapor Deposition (PECVD) is reported. Strong PL is obtained after a fast annealing process for 60 s at te...

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Bibliographic Details
Main Authors: Israel Vivaldo, Roberto C. Ambrosio, Roberto López, Javier Flores-Méndez, Luis A. Sánchez-Gaspariano, Mario Moreno, Filiberto Candia
Format: Article
Language:English
Published: MDPI AG 2020-06-01
Series:Materials
Subjects:
photoluminescence
amorphous silicon carbide
fast thermal annealing process
plasma enhancement chemical vapor deposition
Online Access:https://www.mdpi.com/1996-1944/13/11/2643

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https://www.mdpi.com/1996-1944/13/11/2643

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