The thickness design of unintentionally doped GaN interlayer matched with background doping level for InGaN-based laser diodes

The thickness design of unintentionally doped GaN interlayer matched with background doping level for InGaN-based laser diodes

In order to reduce the internal optical loss of InGaN laser diodes, an unintentionally doped GaN (u-GaN) interlayer is inserted between InGaN/GaN multiple quantum well active region and Al0.2Ga0.8N electron blocking layer. The thickness design of u-GaN interlayer matching up with background doping l...

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Bibliographic Details
Main Authors: P. Chen, D. G. Zhao, D. S. Jiang, J. J. Zhu, Z. S. Liu, J. Yang, X. Li, L. C. Le, X. G. He, W. Liu, X. J. Li, F. Liang, B. S. Zhang, H. Yang, Y. T. Zhang, G. T. Du
Format: Article
Language:English
Published: AIP Publishing LLC 2016-03-01
Series:AIP Advances
Online Access:http://dx.doi.org/10.1063/1.4945015

Internet

http://dx.doi.org/10.1063/1.4945015

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