The thickness design of unintentionally doped GaN interlayer matched with background doping level for InGaN-based laser diodes
In order to reduce the internal optical loss of InGaN laser diodes, an unintentionally doped GaN (u-GaN) interlayer is inserted between InGaN/GaN multiple quantum well active region and Al0.2Ga0.8N electron blocking layer. The thickness design of u-GaN interlayer matching up with background doping l...
| Main Authors: | , , , , , , , , , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2016-03-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/1.4945015 |
| _version_ | 1819212746620665856 |
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| author | P. Chen D. G. Zhao D. S. Jiang J. J. Zhu Z. S. Liu J. Yang X. Li L. C. Le X. G. He W. Liu X. J. Li F. Liang B. S. Zhang H. Yang Y. T. Zhang G. T. Du |
| author_facet | P. Chen D. G. Zhao D. S. Jiang J. J. Zhu Z. S. Liu J. Yang X. Li L. C. Le X. G. He W. Liu X. J. Li F. Liang B. S. Zhang H. Yang Y. T. Zhang G. T. Du |
| author_sort | P. Chen |
| collection | DOAJ |
| description | In order to reduce the internal optical loss of InGaN laser diodes, an unintentionally doped GaN (u-GaN) interlayer is inserted between InGaN/GaN multiple quantum well active region and Al0.2Ga0.8N electron blocking layer. The thickness design of u-GaN interlayer matching up with background doping level for improving laser performance is studied. It is found that a suitably chosen u-GaN interlayer can well modulate the optical absorption loss and optical confinement factor. However, if the value of background doping concentration of u-GaN interlayer is too large, the output light power may decrease. The analysis of energy band diagram of a LD structure with 100 nm u-GaN interlayer shows that the width of n-side depletion region decreases when the background concentration increases, and may become even too small to cover whole MQW, resulting in a serious decrease of the output light power. It means that a suitable interlayer thickness design matching with the background doping level of u-GaN interlayer is significant for InGaN-based laser diodes. |
| first_indexed | 2024-12-23T06:47:52Z |
| format | Article |
| id | doaj.art-032baa8387e64e7ca84723235cdc3c46 |
| institution | Directory Open Access Journal |
| issn | 2158-3226 |
| language | English |
| last_indexed | 2024-12-23T06:47:52Z |
| publishDate | 2016-03-01 |
| publisher | AIP Publishing LLC |
| record_format | Article |
| series | AIP Advances |
| spelling | doaj.art-032baa8387e64e7ca84723235cdc3c462022-12-21T17:56:31ZengAIP Publishing LLCAIP Advances2158-32262016-03-0163035124035124-910.1063/1.4945015079603ADVThe thickness design of unintentionally doped GaN interlayer matched with background doping level for InGaN-based laser diodesP. Chen0D. G. Zhao1D. S. Jiang2J. J. Zhu3Z. S. Liu4J. Yang5X. Li6L. C. Le7X. G. He8W. Liu9X. J. Li10F. Liang11B. S. Zhang12H. Yang13Y. T. Zhang14G. T. Du15State Key Laboratory of Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, P. R. ChinaState Key Laboratory of Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, P. R. ChinaState Key Laboratory of Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, P. R. ChinaState Key Laboratory of Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, P. R. ChinaState Key Laboratory of Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, P. R. ChinaState Key Laboratory of Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, P. R. ChinaState Key Laboratory of Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, P. R. ChinaState Key Laboratory of Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, P. R. ChinaState Key Laboratory of Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, P. R. ChinaState Key Laboratory of Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, P. R. ChinaState Key Laboratory of Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, P. R. ChinaState Key Laboratory of Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, P. R. ChinaKey Laboratory of Nano-devices and Applications of CAS, Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Suzhou 215123, P. R. ChinaKey Laboratory of Nano-devices and Applications of CAS, Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Suzhou 215123, P. R. ChinaState Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun 130023, ChinaState Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun 130023, ChinaIn order to reduce the internal optical loss of InGaN laser diodes, an unintentionally doped GaN (u-GaN) interlayer is inserted between InGaN/GaN multiple quantum well active region and Al0.2Ga0.8N electron blocking layer. The thickness design of u-GaN interlayer matching up with background doping level for improving laser performance is studied. It is found that a suitably chosen u-GaN interlayer can well modulate the optical absorption loss and optical confinement factor. However, if the value of background doping concentration of u-GaN interlayer is too large, the output light power may decrease. The analysis of energy band diagram of a LD structure with 100 nm u-GaN interlayer shows that the width of n-side depletion region decreases when the background concentration increases, and may become even too small to cover whole MQW, resulting in a serious decrease of the output light power. It means that a suitable interlayer thickness design matching with the background doping level of u-GaN interlayer is significant for InGaN-based laser diodes.http://dx.doi.org/10.1063/1.4945015 |
| spellingShingle | P. Chen D. G. Zhao D. S. Jiang J. J. Zhu Z. S. Liu J. Yang X. Li L. C. Le X. G. He W. Liu X. J. Li F. Liang B. S. Zhang H. Yang Y. T. Zhang G. T. Du The thickness design of unintentionally doped GaN interlayer matched with background doping level for InGaN-based laser diodes AIP Advances |
| title | The thickness design of unintentionally doped GaN interlayer matched with background doping level for InGaN-based laser diodes |
| title_full | The thickness design of unintentionally doped GaN interlayer matched with background doping level for InGaN-based laser diodes |
| title_fullStr | The thickness design of unintentionally doped GaN interlayer matched with background doping level for InGaN-based laser diodes |
| title_full_unstemmed | The thickness design of unintentionally doped GaN interlayer matched with background doping level for InGaN-based laser diodes |
| title_short | The thickness design of unintentionally doped GaN interlayer matched with background doping level for InGaN-based laser diodes |
| title_sort | thickness design of unintentionally doped gan interlayer matched with background doping level for ingan based laser diodes |
| url | http://dx.doi.org/10.1063/1.4945015 |
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