Greatly enhanced tunneling electroresistance in ferroelectric tunnel junctions with a double barrier design
Abstract We propose that the double barrier effect is expected to enhance the tunneling electroresistance (TER) in the ferroelectric tunnel junctions (FTJs). To demonstrate the feasibility of this mechanism, we design a model structure of Pt/BaTiO3/LaAlO3/Pt/BaTiO3/LaAlO3/Pt double barrier ferroelec...
| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Nature Portfolio
2023-08-01
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| Series: | npj Computational Materials |
| Online Access: | https://doi.org/10.1038/s41524-023-01101-9 |