Efecto del dopado con Si sobre la estructura de defectos en sistemas heteroepitaxiales GaN/AlN/Si(111)

Efecto del dopado con Si sobre la estructura de defectos en sistemas heteroepitaxiales GaN/AlN/Si(111)

The Si doping effect on the defect structure in GaN epilayers grown by molecular beam epitaxy on Si(111) substrates using AlN buffer layers has been studied. Transmission electron microscopy and related techniques have been used to carry out the structural characterization. The Si doping affects bot...

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Bibliographic Details
Main Authors: Sánchez, A. M., Molina, S. I., Pacheco, F. J., García, R., Sánchez-García, M. A., Sánchez, F. J., Calleja, E.
Format: Article
Language:English
Published: Elsevier 2000-08-01
Series:Boletín de la Sociedad Española de Cerámica y Vidrio
Subjects:
Gallium nitride
GaN/AlN/Si(111)
semiconductor heterostructure
TEM
HREM
Nitruro de Galio
Heteroestructura semiconductora
Online Access:http://ceramicayvidrio.revistas.csic.es/index.php/ceramicayvidrio/article/view/800/828

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http://ceramicayvidrio.revistas.csic.es/index.php/ceramicayvidrio/article/view/800/828

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