Field-free spin–orbit torque switching in ferromagnetic trilayers at sub-ns timescales

Field-free spin–orbit torque switching in ferromagnetic trilayers at sub-ns timescales

Abstract Current-induced spin torques enable the electrical control of the magnetization with low energy consumption. Conventional magnetic random access memory (MRAM) devices rely on spin-transfer torque (STT), this however limits MRAM applications because of the nanoseconds incubation delay and as...

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Bibliographic Details
Main Authors: Qu Yang, Donghyeon Han, Shishun Zhao, Jaimin Kang, Fei Wang, Sung-Chul Lee, Jiayu Lei, Kyung-Jin Lee, Byong-Guk Park, Hyunsoo Yang
Format: Article
Language:English
Published: Nature Portfolio 2024-02-01
Series:Nature Communications
Online Access:https://doi.org/10.1038/s41467-024-46113-1

Internet

https://doi.org/10.1038/s41467-024-46113-1

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