Field-free spin–orbit torque switching in ferromagnetic trilayers at sub-ns timescales
Abstract Current-induced spin torques enable the electrical control of the magnetization with low energy consumption. Conventional magnetic random access memory (MRAM) devices rely on spin-transfer torque (STT), this however limits MRAM applications because of the nanoseconds incubation delay and as...
Main Authors: | Qu Yang, Donghyeon Han, Shishun Zhao, Jaimin Kang, Fei Wang, Sung-Chul Lee, Jiayu Lei, Kyung-Jin Lee, Byong-Guk Park, Hyunsoo Yang |
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Format: | Article |
Language: | English |
Published: |
Nature Portfolio
2024-02-01
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Series: | Nature Communications |
Online Access: | https://doi.org/10.1038/s41467-024-46113-1 |
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