<i>β</i>-Ga<sub>2</sub>O<sub>3</sub>-Based Power Devices: A Concise Review

<i>β</i>-Ga<sub>2</sub>O<sub>3</sub>-Based Power Devices: A Concise Review

Ga<sub>2</sub>O<sub>3</sub> has gained intensive attention for the continuing myth of the electronics as a new-generation wide bandgap semiconductor, owing to its natural physical and chemical properties. In this review article, we selectively summarized the recent advances o...

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Bibliographic Details
Main Authors: Maolin Zhang, Zeng Liu, Lili Yang, Jiafei Yao, Jing Chen, Jun Zhang, Wei Wei, Yufeng Guo, Weihua Tang
Format: Article
Language:English
Published: MDPI AG 2022-03-01
Series:Crystals
Subjects:
Ga<sub>2</sub>O<sub>3</sub>
power device
Schottky barrier diodes
field-effect transistors
Online Access:https://www.mdpi.com/2073-4352/12/3/406

Internet

https://www.mdpi.com/2073-4352/12/3/406

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