<i>β</i>-Ga<sub>2</sub>O<sub>3</sub>-Based Power Devices: A Concise Review
Ga<sub>2</sub>O<sub>3</sub> has gained intensive attention for the continuing myth of the electronics as a new-generation wide bandgap semiconductor, owing to its natural physical and chemical properties. In this review article, we selectively summarized the recent advances o...
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| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2022-03-01
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| Series: | Crystals |
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| Online Access: | https://www.mdpi.com/2073-4352/12/3/406 |
| _version_ | 1797472119446044672 |
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| author | Maolin Zhang Zeng Liu Lili Yang Jiafei Yao Jing Chen Jun Zhang Wei Wei Yufeng Guo Weihua Tang |
| author_facet | Maolin Zhang Zeng Liu Lili Yang Jiafei Yao Jing Chen Jun Zhang Wei Wei Yufeng Guo Weihua Tang |
| author_sort | Maolin Zhang |
| collection | DOAJ |
| description | Ga<sub>2</sub>O<sub>3</sub> has gained intensive attention for the continuing myth of the electronics as a new-generation wide bandgap semiconductor, owing to its natural physical and chemical properties. In this review article, we selectively summarized the recent advances on the experimental and theoretical demonstration of <i>β</i>-Ga<sub>2</sub>O<sub>3</sub>-based power devices, including Schottky barrier diodes and field-effect transistors, aiming for an inherent comprehending of the operating mechanisms, discussion on the obstacles to be addressed, and providing some comprehensive guidance for further developments. In the short run, Ga<sub>2</sub>O<sub>3</sub> may well be promising to lead power electronics. |
| first_indexed | 2024-03-09T19:57:38Z |
| format | Article |
| id | doaj.art-038ce0387956404785d619ef895ea4bb |
| institution | Directory Open Access Journal |
| issn | 2073-4352 |
| language | English |
| last_indexed | 2024-03-09T19:57:38Z |
| publishDate | 2022-03-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Crystals |
| spelling | doaj.art-038ce0387956404785d619ef895ea4bb2023-11-24T00:52:17ZengMDPI AGCrystals2073-43522022-03-0112340610.3390/cryst12030406<i>β</i>-Ga<sub>2</sub>O<sub>3</sub>-Based Power Devices: A Concise ReviewMaolin Zhang0Zeng Liu1Lili Yang2Jiafei Yao3Jing Chen4Jun Zhang5Wei Wei6Yufeng Guo7Weihua Tang8College of Integrated Circuit Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210023, ChinaCollege of Integrated Circuit Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210023, ChinaCollege of Integrated Circuit Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210023, ChinaCollege of Integrated Circuit Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210023, ChinaCollege of Integrated Circuit Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210023, ChinaCollege of Integrated Circuit Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210023, ChinaCollege of Electronic and Optical Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210023, ChinaCollege of Integrated Circuit Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210023, ChinaCollege of Integrated Circuit Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210023, ChinaGa<sub>2</sub>O<sub>3</sub> has gained intensive attention for the continuing myth of the electronics as a new-generation wide bandgap semiconductor, owing to its natural physical and chemical properties. In this review article, we selectively summarized the recent advances on the experimental and theoretical demonstration of <i>β</i>-Ga<sub>2</sub>O<sub>3</sub>-based power devices, including Schottky barrier diodes and field-effect transistors, aiming for an inherent comprehending of the operating mechanisms, discussion on the obstacles to be addressed, and providing some comprehensive guidance for further developments. In the short run, Ga<sub>2</sub>O<sub>3</sub> may well be promising to lead power electronics.https://www.mdpi.com/2073-4352/12/3/406Ga<sub>2</sub>O<sub>3</sub>power deviceSchottky barrier diodesfield-effect transistors |
| spellingShingle | Maolin Zhang Zeng Liu Lili Yang Jiafei Yao Jing Chen Jun Zhang Wei Wei Yufeng Guo Weihua Tang <i>β</i>-Ga<sub>2</sub>O<sub>3</sub>-Based Power Devices: A Concise Review Crystals Ga<sub>2</sub>O<sub>3</sub> power device Schottky barrier diodes field-effect transistors |
| title | <i>β</i>-Ga<sub>2</sub>O<sub>3</sub>-Based Power Devices: A Concise Review |
| title_full | <i>β</i>-Ga<sub>2</sub>O<sub>3</sub>-Based Power Devices: A Concise Review |
| title_fullStr | <i>β</i>-Ga<sub>2</sub>O<sub>3</sub>-Based Power Devices: A Concise Review |
| title_full_unstemmed | <i>β</i>-Ga<sub>2</sub>O<sub>3</sub>-Based Power Devices: A Concise Review |
| title_short | <i>β</i>-Ga<sub>2</sub>O<sub>3</sub>-Based Power Devices: A Concise Review |
| title_sort | i β i ga sub 2 sub o sub 3 sub based power devices a concise review |
| topic | Ga<sub>2</sub>O<sub>3</sub> power device Schottky barrier diodes field-effect transistors |
| url | https://www.mdpi.com/2073-4352/12/3/406 |
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