Optimization of Ohmic Contact to Ultrathin-Barrier AlGaN/GaN Heterostructure via an ‘Ohmic-Before-Passivation’ Process
Non-recessed ohmic contact resistance (R<sub>c</sub>) on ultrathin-barrier (UTB) AlGaN(<6 nm)/GaN heterostructure was effectively reduced to a low value of 0.16 Ω·mm. The method called the ‘ohmic-before-passivation’ process was adopted to eliminate the effects of fluorine plasma etchi...
| Main Authors: | , , , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2023-04-01
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| Series: | Electronics |
| Subjects: | |
| Online Access: | https://www.mdpi.com/2079-9292/12/8/1767 |