Built in Potential of a-Si:H Based p-i-n Solar Cell at Different Energy Gap of Intrinsic Layer
The photovoltaic process inside a solar cell can be described using the distribution of electrostatic potential in the material. In this paper, the magnitude of the electrostatic potential of the solar cell for the p-i-n junction type is analyzed as the built in potential due to the diffusion activi...
| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Physics Department, Faculty of Mathematics and Natural Sciences University of Jember
2018-11-01
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| Series: | Computational and Experimental Research in Materials and Renewable Energy |
| Online Access: | https://jurnal.unej.ac.id/index.php/CERiMRE/article/view/19547 |