Smart Electrical Screening Methodology for Channel Hole Defects of 3D Vertical NAND (VNAND) Flash Memory

Smart Electrical Screening Methodology for Channel Hole Defects of 3D Vertical NAND (VNAND) Flash Memory

In order to successfully achieve mass production in NAND flash memory, a novel test procedure has been proposed to electrically detect and screen the channel hole defects, such as Not-Open, Bowing, and Bending, which are unique in high-density 3D NAND flash memory. Since channel hole defects lead to...

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Bibliographic Details
Main Authors: Beomjun Kim, Gyeongseob Seo, Myungsuk Kim
Format: Article
Language:English
Published: MDPI AG 2024-03-01
Series:Eng
Subjects:
3D NAND flash memory
test methodology
screen
channel hole
defect
mass production
Online Access:https://www.mdpi.com/2673-4117/5/1/27

Internet

https://www.mdpi.com/2673-4117/5/1/27

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