A Novel Method for Growing α-Ga<sub>2</sub>O<sub>3</sub> Films Using Mist-CVD Face-to-face Heating Plates
In this paper, the method for growing α-Ga<sub>2</sub>O<sub>3</sub> films on c-plane sapphire substrates using an inexpensive fine-channel mist-CVD face-to-face heating plate was investigated. Because high temperatures can result in reactor deformation, expensive AlN ceramics...
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| Format: | Article |
| Language: | English |
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MDPI AG
2022-12-01
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| Series: | Nanomaterials |
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| Online Access: | https://www.mdpi.com/2079-4991/13/1/72 |
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| author | Yan Zuo Qian Feng Tao Zhang Xusheng Tian Wenji Li Jiale Li Chunfu Zhang Jincheng Zhang Yue Hao |
| author_facet | Yan Zuo Qian Feng Tao Zhang Xusheng Tian Wenji Li Jiale Li Chunfu Zhang Jincheng Zhang Yue Hao |
| author_sort | Yan Zuo |
| collection | DOAJ |
| description | In this paper, the method for growing α-Ga<sub>2</sub>O<sub>3</sub> films on c-plane sapphire substrates using an inexpensive fine-channel mist-CVD face-to-face heating plate was investigated. Because high temperatures can result in reactor deformation, expensive AlN ceramics resistant to deformation are used as the reactor fabrication material in traditional fine-channel mist-CVD equipment, which limits its use for promotion and research purposes. In this work, we used a face-to-face heating method to replace the traditional single-sided heating method which will reduce the requirement for equipment sealability. Therefore, cheap quartz can be used to replace expensive AlN ceramics to make reactors, which can greatly reduce the cost of mist-CVD equipment. We also investigated the effects of substrate temperature and carrier gas on the crystalline quality and surface morphology of α-Ga<sub>2</sub>O<sub>3</sub> films. By optimizing the fabrication conditions, we obtained triangular grains with edges that were clearly visible in atomic force microscopy images. Using absorption spectrum analysis, we also found that the optical bandgap of the film reached 5.24 eV. Finally, we recorded a value of 508 arcsec for the full width at half maximum of the α-Ga<sub>2</sub>O<sub>3</sub> (0006) diffraction peak in the X-ray diffraction pattern. |
| first_indexed | 2024-03-09T03:28:00Z |
| format | Article |
| id | doaj.art-03c475481b8841a781ebbc507b8d9ed2 |
| institution | Directory Open Access Journal |
| issn | 2079-4991 |
| language | English |
| last_indexed | 2024-03-09T03:28:00Z |
| publishDate | 2022-12-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Nanomaterials |
| spelling | doaj.art-03c475481b8841a781ebbc507b8d9ed22023-12-03T14:58:22ZengMDPI AGNanomaterials2079-49912022-12-011317210.3390/nano13010072A Novel Method for Growing α-Ga<sub>2</sub>O<sub>3</sub> Films Using Mist-CVD Face-to-face Heating PlatesYan Zuo0Qian Feng1Tao Zhang2Xusheng Tian3Wenji Li4Jiale Li5Chunfu Zhang6Jincheng Zhang7Yue Hao8State Key Discipline Laboratory of Wide Bandgap Semiconductor Technology, School of Microelectronics, Xidian University, Xi’an 710071, ChinaState Key Discipline Laboratory of Wide Bandgap Semiconductor Technology, School of Microelectronics, Xidian University, Xi’an 710071, ChinaState Key Discipline Laboratory of Wide Bandgap Semiconductor Technology, School of Microelectronics, Xidian University, Xi’an 710071, ChinaState Key Discipline Laboratory of Wide Bandgap Semiconductor Technology, School of Microelectronics, Xidian University, Xi’an 710071, ChinaState Key Discipline Laboratory of Wide Bandgap Semiconductor Technology, School of Microelectronics, Xidian University, Xi’an 710071, ChinaState Key Discipline Laboratory of Wide Bandgap Semiconductor Technology, School of Microelectronics, Xidian University, Xi’an 710071, ChinaState Key Discipline Laboratory of Wide Bandgap Semiconductor Technology, School of Microelectronics, Xidian University, Xi’an 710071, ChinaState Key Discipline Laboratory of Wide Bandgap Semiconductor Technology, School of Microelectronics, Xidian University, Xi’an 710071, ChinaState Key Discipline Laboratory of Wide Bandgap Semiconductor Technology, School of Microelectronics, Xidian University, Xi’an 710071, ChinaIn this paper, the method for growing α-Ga<sub>2</sub>O<sub>3</sub> films on c-plane sapphire substrates using an inexpensive fine-channel mist-CVD face-to-face heating plate was investigated. Because high temperatures can result in reactor deformation, expensive AlN ceramics resistant to deformation are used as the reactor fabrication material in traditional fine-channel mist-CVD equipment, which limits its use for promotion and research purposes. In this work, we used a face-to-face heating method to replace the traditional single-sided heating method which will reduce the requirement for equipment sealability. Therefore, cheap quartz can be used to replace expensive AlN ceramics to make reactors, which can greatly reduce the cost of mist-CVD equipment. We also investigated the effects of substrate temperature and carrier gas on the crystalline quality and surface morphology of α-Ga<sub>2</sub>O<sub>3</sub> films. By optimizing the fabrication conditions, we obtained triangular grains with edges that were clearly visible in atomic force microscopy images. Using absorption spectrum analysis, we also found that the optical bandgap of the film reached 5.24 eV. Finally, we recorded a value of 508 arcsec for the full width at half maximum of the α-Ga<sub>2</sub>O<sub>3</sub> (0006) diffraction peak in the X-ray diffraction pattern.https://www.mdpi.com/2079-4991/13/1/72α-Ga<sub>2</sub>O<sub>3</sub> filmmist-CVDX-ray diffractionface-to-face |
| spellingShingle | Yan Zuo Qian Feng Tao Zhang Xusheng Tian Wenji Li Jiale Li Chunfu Zhang Jincheng Zhang Yue Hao A Novel Method for Growing α-Ga<sub>2</sub>O<sub>3</sub> Films Using Mist-CVD Face-to-face Heating Plates Nanomaterials α-Ga<sub>2</sub>O<sub>3</sub> film mist-CVD X-ray diffraction face-to-face |
| title | A Novel Method for Growing α-Ga<sub>2</sub>O<sub>3</sub> Films Using Mist-CVD Face-to-face Heating Plates |
| title_full | A Novel Method for Growing α-Ga<sub>2</sub>O<sub>3</sub> Films Using Mist-CVD Face-to-face Heating Plates |
| title_fullStr | A Novel Method for Growing α-Ga<sub>2</sub>O<sub>3</sub> Films Using Mist-CVD Face-to-face Heating Plates |
| title_full_unstemmed | A Novel Method for Growing α-Ga<sub>2</sub>O<sub>3</sub> Films Using Mist-CVD Face-to-face Heating Plates |
| title_short | A Novel Method for Growing α-Ga<sub>2</sub>O<sub>3</sub> Films Using Mist-CVD Face-to-face Heating Plates |
| title_sort | novel method for growing α ga sub 2 sub o sub 3 sub films using mist cvd face to face heating plates |
| topic | α-Ga<sub>2</sub>O<sub>3</sub> film mist-CVD X-ray diffraction face-to-face |
| url | https://www.mdpi.com/2079-4991/13/1/72 |
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