Thermal-annealing behavior of in-core neutron-irradiated epitaxial 4HSiC

Thermal-annealing behavior of in-core neutron-irradiated epitaxial 4HSiC

The effect of thermal annealing on defect recovery of in-core neutron-irradiated 4HSiC was investigated. Au/SiC Schottky diodes were manufactured using a 4HSiC epitaxial wafer that was neutron-irradiated at the HANARO research reactor. The electrical characteristics of their epitaxial layers were...

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Bibliographic Details
Main Authors: Junesic Park, Byung-Gun Park, Gwang-Min Sun
Format: Article
Language:English
Published: Elsevier 2023-01-01
Series:Nuclear Engineering and Technology
Subjects:
Silicon carbide
Neutron irradiation
Radiation damage
Thermal annealing
Deep-level transient spectroscopy
Online Access:http://www.sciencedirect.com/science/article/pii/S1738573322004430

Internet

http://www.sciencedirect.com/science/article/pii/S1738573322004430

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