Design and Validation of a V-Gate n-MOSFET-Based RH CMOS Logic Circuit with Tolerance to the TID Effect

Design and Validation of a V-Gate n-MOSFET-Based RH CMOS Logic Circuit with Tolerance to the TID Effect

This study designed a radiation-hardened (RH) complementary metal oxide semiconductor (CMOS) logic circuit based on an RH variable-gate (V-gate) n-MOSFET that was resistant to the total ionizing dose (TID) effect and evaluated its tolerance to radiation. Among the different CMOS logic circuits, NOT,...

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Bibliographic Details
Main Authors: Donghan Ki, Minwoong Lee, Namho Lee, Seongik Cho
Format: Article
Language:English
Published: MDPI AG 2023-08-01
Series:Electronics
Subjects:
layout modification
radiation tolerance
total ionizing dose effect
logic gate
modeling and simulation
Online Access:https://www.mdpi.com/2079-9292/12/15/3331

Internet

https://www.mdpi.com/2079-9292/12/15/3331

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