Corrections to “Design-Oriented All-Regime All-Region 7-Parameter Short-Channel MOSFET Model Based on Inversion Charge”

In the above article <xref ref-type="bibr" rid="ref1">[1]</xref>, <xref rid="deqn33-deqn36" ref-type="disp-formula">equations (33)</xref> and <xref rid="deqn33-deqn36" ref-type="disp-formula">(36)</xref>...

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Bibliographic Details
Main Authors: Dayana A. Pino-Monroy, Patrick Scheer, Mohamed Khalil Bouchoucha, Carlos Galup-Montoro, Manuel J. Barragan, Philippe Cathelin, Jean-Michel Fournier, Andreia Cathelin, Sylvain Bourdel
Format: Article
Language:English
Published: IEEE 2023-01-01
Series:IEEE Access
Online Access:https://ieeexplore.ieee.org/document/10113793/