Corrections to “Design-Oriented All-Regime All-Region 7-Parameter Short-Channel MOSFET Model Based on Inversion Charge”
In the above article <xref ref-type="bibr" rid="ref1">[1]</xref>, <xref rid="deqn33-deqn36" ref-type="disp-formula">equations (33)</xref> and <xref rid="deqn33-deqn36" ref-type="disp-formula">(36)</xref>...
| Main Authors: | , , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
IEEE
2023-01-01
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| Series: | IEEE Access |
| Online Access: | https://ieeexplore.ieee.org/document/10113793/ |
| _version_ | 1797835791447097344 |
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| author | Dayana A. Pino-Monroy Patrick Scheer Mohamed Khalil Bouchoucha Carlos Galup-Montoro Manuel J. Barragan Philippe Cathelin Jean-Michel Fournier Andreia Cathelin Sylvain Bourdel |
| author_facet | Dayana A. Pino-Monroy Patrick Scheer Mohamed Khalil Bouchoucha Carlos Galup-Montoro Manuel J. Barragan Philippe Cathelin Jean-Michel Fournier Andreia Cathelin Sylvain Bourdel |
| author_sort | Dayana A. Pino-Monroy |
| collection | DOAJ |
| description | In the above article <xref ref-type="bibr" rid="ref1">[1]</xref>, <xref rid="deqn33-deqn36" ref-type="disp-formula">equations (33)</xref> and <xref rid="deqn33-deqn36" ref-type="disp-formula">(36)</xref> had a typing error. The correct equations are: |
| first_indexed | 2024-04-09T14:58:08Z |
| format | Article |
| id | doaj.art-04270bb56ad948ce828d7b6d35244587 |
| institution | Directory Open Access Journal |
| issn | 2169-3536 |
| language | English |
| last_indexed | 2024-04-09T14:58:08Z |
| publishDate | 2023-01-01 |
| publisher | IEEE |
| record_format | Article |
| series | IEEE Access |
| spelling | doaj.art-04270bb56ad948ce828d7b6d352445872023-05-01T23:01:18ZengIEEEIEEE Access2169-35362023-01-0111396503965010.1109/ACCESS.2023.326721810113793Corrections to “Design-Oriented All-Regime All-Region 7-Parameter Short-Channel MOSFET Model Based on Inversion Charge”Dayana A. Pino-Monroy0https://orcid.org/0000-0002-2347-8870Patrick Scheer1Mohamed Khalil Bouchoucha2https://orcid.org/0000-0001-6578-1803Carlos Galup-Montoro3https://orcid.org/0000-0003-4623-6425Manuel J. Barragan4https://orcid.org/0000-0003-0187-604XPhilippe Cathelin5https://orcid.org/0000-0001-5603-3352Jean-Michel Fournier6Andreia Cathelin7https://orcid.org/0000-0003-2745-4523Sylvain Bourdel8https://orcid.org/0000-0001-9930-9945STMicroelectronics, Crolles, FranceSTMicroelectronics, Crolles, FranceSTMicroelectronics, Crolles, FranceDepartment of Electrical and Electronics Engineering, Universidade Federal de Santa Catarina, Florianópolis, BrazilTIMA Laboratory, CNRS, Grenoble INP, Université Grenoble Alpes, Grenoble, FranceSTMicroelectronics, Crolles, FranceTIMA Laboratory, CNRS, Grenoble INP, Université Grenoble Alpes, Grenoble, FranceSTMicroelectronics, Crolles, FranceTIMA Laboratory, CNRS, Grenoble INP, Université Grenoble Alpes, Grenoble, FranceIn the above article <xref ref-type="bibr" rid="ref1">[1]</xref>, <xref rid="deqn33-deqn36" ref-type="disp-formula">equations (33)</xref> and <xref rid="deqn33-deqn36" ref-type="disp-formula">(36)</xref> had a typing error. The correct equations are:https://ieeexplore.ieee.org/document/10113793/ |
| spellingShingle | Dayana A. Pino-Monroy Patrick Scheer Mohamed Khalil Bouchoucha Carlos Galup-Montoro Manuel J. Barragan Philippe Cathelin Jean-Michel Fournier Andreia Cathelin Sylvain Bourdel Corrections to “Design-Oriented All-Regime All-Region 7-Parameter Short-Channel MOSFET Model Based on Inversion Charge” IEEE Access |
| title | Corrections to “Design-Oriented All-Regime All-Region 7-Parameter Short-Channel MOSFET Model Based on Inversion Charge” |
| title_full | Corrections to “Design-Oriented All-Regime All-Region 7-Parameter Short-Channel MOSFET Model Based on Inversion Charge” |
| title_fullStr | Corrections to “Design-Oriented All-Regime All-Region 7-Parameter Short-Channel MOSFET Model Based on Inversion Charge” |
| title_full_unstemmed | Corrections to “Design-Oriented All-Regime All-Region 7-Parameter Short-Channel MOSFET Model Based on Inversion Charge” |
| title_short | Corrections to “Design-Oriented All-Regime All-Region 7-Parameter Short-Channel MOSFET Model Based on Inversion Charge” |
| title_sort | corrections to x201c design oriented all regime all region 7 parameter short channel mosfet model based on inversion charge x201d |
| url | https://ieeexplore.ieee.org/document/10113793/ |
| work_keys_str_mv | AT dayanaapinomonroy correctionstox201cdesignorientedallregimeallregion7parametershortchannelmosfetmodelbasedoninversionchargex201d AT patrickscheer correctionstox201cdesignorientedallregimeallregion7parametershortchannelmosfetmodelbasedoninversionchargex201d AT mohamedkhalilbouchoucha correctionstox201cdesignorientedallregimeallregion7parametershortchannelmosfetmodelbasedoninversionchargex201d AT carlosgalupmontoro correctionstox201cdesignorientedallregimeallregion7parametershortchannelmosfetmodelbasedoninversionchargex201d AT manueljbarragan correctionstox201cdesignorientedallregimeallregion7parametershortchannelmosfetmodelbasedoninversionchargex201d AT philippecathelin correctionstox201cdesignorientedallregimeallregion7parametershortchannelmosfetmodelbasedoninversionchargex201d AT jeanmichelfournier correctionstox201cdesignorientedallregimeallregion7parametershortchannelmosfetmodelbasedoninversionchargex201d AT andreiacathelin correctionstox201cdesignorientedallregimeallregion7parametershortchannelmosfetmodelbasedoninversionchargex201d AT sylvainbourdel correctionstox201cdesignorientedallregimeallregion7parametershortchannelmosfetmodelbasedoninversionchargex201d |