Effect of elastic disorder on single-electron transport through a buckled nanotube

We study transport properties of a single electron transistor based on elastic nanotube. Assuming that an external compressive force is applied to the nanotube, we focus on the vicinity of the Euler buckling instability. We demonstrate that in this regime the transport through the transistor is extr...

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Bibliographic Details
Main Authors: S. S. Evseev, I. S. Burmistrov, K. S. Tikhonov, V. Yu. Kachorovskii
Format: Article
Language:English
Published: American Physical Society 2022-01-01
Series:Physical Review Research
Online Access:http://doi.org/10.1103/PhysRevResearch.4.013068