Morphology Transition of Te-Doped InAs Nanowire on InP(111)B Grown Using MOCVD Method

Morphology Transition of Te-Doped InAs Nanowire on InP(111)B Grown Using MOCVD Method

In this paper, we reported changes in the growth morphology of n+InAs nanowires (NWs) doped with Te which were selectively grown on nano-hole patterned InP(111)B substrates using an MOCVD method. While the vertical growth of InAs NWs in the <111> direction was extremely suppressed, their later...

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Bibliographic Details
Main Authors: Chang-Hun Song, Minwoo Kong, Hyunchul Jang, Sang Tae Lee, Hyeong-Ho Park, Donghyun Kim, Keunman Song, Dae-Hong Ko, Chan-Soo Shin
Format: Article
Language:English
Published: MDPI AG 2022-12-01
Series:Crystals
Subjects:
MOCVD
InAs
nanowire
vapor–solid method
reverse tapering
Online Access:https://www.mdpi.com/2073-4352/12/12/1846

Internet

https://www.mdpi.com/2073-4352/12/12/1846

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