Resonant MEMS Pressure Sensor in 180 nm CMOS Technology Obtained by BEOL Isotropic Etching

Resonant MEMS Pressure Sensor in 180 nm CMOS Technology Obtained by BEOL Isotropic Etching

This work presents the design and characterization of a resonant CMOS-MEMS pressure sensor manufactured in a standard 180 nm CMOS industry-compatible technology. The device consists of aluminum square plates attached together by means of tungsten vias integrated into the back end of line (BEOL) of t...

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Bibliographic Details
Main Authors: Diana Mata-Hernandez, Daniel Fernández, Saoni Banerji, Jordi Madrenas
Format: Article
Language:English
Published: MDPI AG 2020-10-01
Series:Sensors
Subjects:
BEOL
CMOS
MEMS
resonator
etching
resonance
Online Access:https://www.mdpi.com/1424-8220/20/21/6037

Internet

https://www.mdpi.com/1424-8220/20/21/6037

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