Resonant MEMS Pressure Sensor in 180 nm CMOS Technology Obtained by BEOL Isotropic Etching
This work presents the design and characterization of a resonant CMOS-MEMS pressure sensor manufactured in a standard 180 nm CMOS industry-compatible technology. The device consists of aluminum square plates attached together by means of tungsten vias integrated into the back end of line (BEOL) of t...
Main Authors: | Diana Mata-Hernandez, Daniel Fernández, Saoni Banerji, Jordi Madrenas |
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Format: | Article |
Language: | English |
Published: |
MDPI AG
2020-10-01
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Series: | Sensors |
Subjects: | |
Online Access: | https://www.mdpi.com/1424-8220/20/21/6037 |
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