Development of Ni₂P Contact Technology and Its Integration on III-V Materials for 300 mm Si Photonics Platform
In order to assess their potential use as contact layers for Si photonics devices, Ni<sub>2</sub>P thin films were developed on a 300 mm platform. The Ni<sub>2</sub>P layers, obtained by magnetron sputtering of a Ni<sub>2</sub>P target, were stable and reproducibl...
| Main Authors: | , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
IEEE
2022-01-01
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| Series: | IEEE Journal of the Electron Devices Society |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/9653663/ |