Adaptive Bitline Voltage Countermeasure for Neighbor Wordline Interference in 3D NAND Flash Memory-Based Sensors

Adaptive Bitline Voltage Countermeasure for Neighbor Wordline Interference in 3D NAND Flash Memory-Based Sensors

Three-dimensional NAND flash memory is widely used in sensor systems as an advanced storage medium that ensures system stability through fast data access. However, in flash memory, as the number of cell bits increases and the process pitch keeps scaling, the data disturbance becomes more serious, es...

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Bibliographic Details
Main Authors: Hanshui Fan, Xuan Tian, Huiting Peng, Yinfeng Shen, Liang Li, Ming Li, Liming Gao
Format: Article
Language:English
Published: MDPI AG 2023-03-01
Series:Sensors
Subjects:
3D NAND flash memory
bitline voltage
channel potential
DIBL effect
device model
MONOS
Online Access:https://www.mdpi.com/1424-8220/23/6/3212

Internet

https://www.mdpi.com/1424-8220/23/6/3212

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